PartNumber | IXFX320N17T2 | IXFX32N100P | IXFX30N100Q2 |
Description | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET 32 Amps 1000V 0.32 Rds | MOSFET 30 Amps 1000V 0.35 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | PLUS-247 | TO-247-3 | TO-247-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 1670 W | 960 W | 735 W |
Tradename | HiPerFET | HiPerFET | HyperFET |
Packaging | Tube | Tube | Tube |
Product | MOSFET Gate Drivers | - | - |
Series | IXFX320N17 | IXFX32N100 | IXFX30N100 |
Brand | IXYS | IXYS | IXYS |
Fall Time | 230 ns | 43 ns | 10 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 170 ns | 55 ns | 14 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.232808 oz | 0.056438 oz | 0.056438 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 1 kV | 1 kV |
Id Continuous Drain Current | - | 32 A | 30 A |
Rds On Drain Source Resistance | - | 320 mOhms | 400 mOhms |
Vgs th Gate Source Threshold Voltage | - | 6.5 V | - |
Vgs Gate Source Voltage | - | 30 V | 30 V |
Qg Gate Charge | - | 225 nC | - |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 21.34 mm | 21.34 mm |
Length | - | 16.13 mm | 16.13 mm |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Type | - | Polar Power MOSFET HiPerFET | - |
Width | - | 5.21 mm | 5.21 mm |
Forward Transconductance Min | - | 13 S | - |
Typical Turn Off Delay Time | - | 76 ns | 60 ns |
Typical Turn On Delay Time | - | 50 ns | 22 ns |