 | |  | |
| PartNumber | IXTP2N100P | IXTP2N100 | IXTP2N100A |
| Description | MOSFET 2 Amps 1000V 7.5 Rds | MOSFET 2 Amps 1000V 7 Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
| Id Continuous Drain Current | 2 A | 2 A | - |
| Rds On Drain Source Resistance | 7.5 Ohms | 7 Ohms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 86 W | 100 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Height | 9.15 mm | 9.15 mm | - |
| Length | 10.66 mm | 10.66 mm | - |
| Series | IXTP2N100 | IXTP2N100 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.83 mm | 4.82 mm | - |
| Brand | IXYS | IXYS | - |
| Fall Time | 27 ns | 30 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 29 ns | 15 ns | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 80 ns | 60 ns | - |
| Typical Turn On Delay Time | 25 ns | 15 ns | - |
| Unit Weight | 0.081130 oz | 0.012346 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Littelfuse |
IXTP2N100P | MOSFET 2 Amps 1000V 7.5 Rds | |
| IXTP2N100 | MOSFET 2 Amps 1000V 7 Rds | ||
| IXTP2N100A | Neu und Original | ||
| IXTP2N100TC | Neu und Original | ||
| IXTP2N100 | MOSFET 2 Amps 1000V 7 Rds | ||
| IXTP2N100P | IGBT Transistors MOSFET 2 Amps 1000V 7.5 Rds |