IXTQ36N

IXTQ36N30P vs IXTQ36N20T vs IXTQ36N50

 
PartNumberIXTQ36N30PIXTQ36N20TIXTQ36N50
DescriptionMOSFET 36 Amps 300V 0.11 RdsMOSFET 36 Amps 200V 60 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3P-3TO-3P-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage300 V200 V-
Id Continuous Drain Current36 A36 A-
Rds On Drain Source Resistance110 mOhms60 Ohms-
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingTubeTube-
Height20.3 mm--
Length15.8 mm--
SeriesIXTQ36N30IXTQ36N20-
Transistor Type1 N-Channel1 N-Channel-
Width4.9 mm--
BrandIXYSIXYS-
Fall Time28 ns--
Product TypeMOSFETMOSFET-
Rise Time30 ns--
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time97 ns--
Typical Turn On Delay Time24 ns--
Unit Weight0.194007 oz0.194007 oz-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTQ36N50P MOSFET 36.0 Amps 500 V 0.17 Ohm Rds
IXTQ36N30P MOSFET 36 Amps 300V 0.11 Rds
IXTQ36N20T MOSFET 36 Amps 200V 60 Rds
IXTQ36N50 Neu und Original
IXTQ36N50P TO247 Neu und Original
IXTQ36N50P Darlington Transistors MOSFET 36.0 Amps 500 V 0.17 Ohm Rds
IXTQ36N30P Darlington Transistors MOSFET 36 Amps 300V 0.11 Rds
IXTQ36N20T MOSFET 36 Amps 200V 60 Rds
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