PartNumber | IXTQ86N25T | IXTQ82N25P | IXTQ86N20T |
Description | Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-3P (3) | MOSFET 82 Amps 250V 0.035 Rds | MOSFET 86 Amps 200V 29 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | - | - |
Type | Trench Gate | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | 30 V |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-3P | TO-3P-3 | TO-3P-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
Packaging | Tube | Tube | Tube |
Configuration | Single | Single | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 25 ns | 22 ns | 29 ns |
Id Continuous Drain Current | 86 A | 82 A | 86 A |
Pd Power Dissipation | 540 W | 500 W | 480 W |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rds On Drain Source Resistance | 37 mOhms | 35 mOhms | 29 mOhms |
Rise Time | 28 ns | 20 ns | 24 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Tradename | Trench | - | HiPerFET |
Typical Turn Off Delay Time | 55 ns | 78 ns | 52 ns |
Typical Turn On Delay Time | 22 ns | 29 ns | 22 ns |
Vds Drain Source Breakdown Voltage | 250 V | 250 V | 200 V |
Vgs th Gate Source Threshold Voltage | 3 V | - | 5 V |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 20.3 mm | - |
Length | - | 15.8 mm | - |
Series | - | IXTQ82N25 | IXTQ86N20 |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Width | - | 4.9 mm | - |
Unit Weight | - | 0.194007 oz | 0.194007 oz |
Qg Gate Charge | - | - | 90 nC |