PartNumber | IXTY44N10T-TRL | IXTY44N10T | IXTY48P05T |
Description | Discrete Semiconductor Modules Trench Power MOSFET | MOSFET 44 Amps 100V 25.0 Rds | MOSFET TrenchP Power MOSFET |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | - |
Product | Power MOSFET Modules | - | - |
Type | Trench | TrenchMV Power MOSFET | - |
Vgs Gate Source Voltage | 20 V | 30 V | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Packaging | Reel | Tube | Tube |
Configuration | Single | Single | - |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | P-Channel |
Fall Time | 32 ns | 32 ns | - |
Id Continuous Drain Current | 44 A | 44 A | 48 A |
Pd Power Dissipation | 130 W | 130 W | - |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rds On Drain Source Resistance | 30 mOhms | 22 mOhms | 30 mOhms |
Rise Time | 47 ns | 47 ns | - |
Factory Pack Quantity | 2500 | 70 | 70 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Tradename | Trench | HiPerFET | - |
Typical Turn Off Delay Time | 36 ns | 36 ns | - |
Typical Turn On Delay Time | 21 ns | 21 ns | - |
Vds Drain Source Breakdown Voltage | 100 V | 85 V | 50 V |
Vgs th Gate Source Threshold Voltage | 2.5 V | 4.5 V | - |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | - |
Qg Gate Charge | - | 33 nC | - |
Channel Mode | - | Enhancement | - |
Height | - | 2.38 mm | - |
Length | - | 6.22 mm | - |
Series | - | IXTY44N10 | IXTY48P05 |
Transistor Type | - | 1 N-Channel | - |
Width | - | 6.73 mm | - |
Forward Transconductance Min | - | 13 S | - |
Unit Weight | - | 0.012346 oz | 0.081130 oz |