NTHD4502

NTHD4502NT1G vs NTHD4502N vs NTHD4502NT1

 
PartNumberNTHD4502NT1GNTHD4502NNTHD4502NT1
DescriptionMOSFET 30V 3.9A Dual N-ChannelMOSFET 2N-CH 30V 2.2A CHIPFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseChipFET-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current2.9 A--
Rds On Drain Source Resistance200 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge3.6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.13 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.05 mm--
Length3.05 mm--
ProductMOSFET Small Signal--
SeriesNTHD4502N--
Transistor Type2 N-Channel--
TypeMOSFET--
Width1.65 mm--
BrandON Semiconductor--
Forward Transconductance Min3.8 S--
Fall Time12.6 ns, 5.4 ns--
Product TypeMOSFET--
Rise Time12.6 ns, 5.4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9.6 ns, 14.9 ns--
Typical Turn On Delay Time7.8 ns, 6.5 ns--
Unit Weight0.002998 oz--
Hersteller Teil # Beschreibung RFQ
NTHD4502NT1G MOSFET 30V 3.9A Dual N-Channel
NTHD4502N Neu und Original
ON Semiconductor
ON Semiconductor
NTHD4502NT1 MOSFET 2N-CH 30V 2.2A CHIPFET
NTHD4502NT1G MOSFET 2N-CH 30V 2.2A CHIPFET
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