NTLJF3117PT stock, NTLJF3117PT, NTLJF3117PT1G


PartNumber	NTLJF3117PT1G	NTLJF3117PTAG	NTLJF3117PT1G/FDMA2P853
Description	MOSFET PFET 2X2 20V 4.1A 106MOHM	MOSFET PFET 20V 4.1A 106MO 2X2
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	WDFN-6	WDFN-6	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	P-Channel	P-Channel	-
Vds Drain Source Breakdown Voltage	20 V	20 V	-
Id Continuous Drain Current	3.3 A	2.3 A	-
Rds On Drain Source Resistance	100 mOhms	150 mOhms	-
Vgs Gate Source Voltage	8 V	8 V	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	1.5 W	710 mW	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Packaging	Reel	Reel	-
Height	0.75 mm	0.75 mm	-
Length	2 mm	2 mm	-
Product	MOSFET Small Signal	MOSFET Small Signal	-
Series	NTLJF3117P	-	-
Transistor Type	1 P-Channel	1 P-Channel	-
Type	FETs - MOSFETs	Power MOSFET	-
Width	2 mm	2 mm	-
Brand	ON Semiconductor	ON Semiconductor	-
Forward Transconductance Min	3.1 S	3.1 S	-
Fall Time	13.2 ns, 15 ns	19.1 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	13.2 ns, 15 ns	13.2 ns	-
Factory Pack Quantity	3000	3000	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	13.7 ns, 19.8 ns	13.7 ns	-
Typical Turn On Delay Time	5.2 ns, 5.5 ns	5.2 ns	-

Search Part Number : "NTLJF3117PT", Match & Start with "NTLJF3117PT" - Total : 5

Hersteller	Teil #	Beschreibung
	NTLJF3117PT1G	MOSFET PFET 2X2 20V 4.1A 106MOHM
	NTLJF3117PT1G/FDMA2P853	Neu und Original
ON Semiconductor	NTLJF3117PTAG	MOSFET PFET 20V 4.1A 106MO 2X2
	NTLJF3117PT1G	MOSFET P-CH 20V 2.3A 6-WDFN
	NTLJF3117PTAG	MOSFET P-CH 20V 2.3A 6-WDFN

NTLJF3117PT