 |  | | |
| PartNumber | NTLJS3113PT1G | NTLJS3113 | NTLJS3113P |
| Description | MOSFET PFET 2X2 20V 9.5A 42MOHM | ||
| Manufacturer | ON Semiconductor | - | ON |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | WDFN-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 5.8 A | - | - |
| Rds On Drain Source Resistance | 90 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 670 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 13 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.9 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.75 mm | - | - |
| Length | 2 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTLJS3113P | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 5.9 S | - | - |
| Fall Time | 56.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 17.5 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 60 ns | - | - |
| Typical Turn On Delay Time | 6.9 ns | - | - |
| Unit Weight | 0.000317 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NTLJS3113PT1G | MOSFET PFET 2X2 20V 9.5A 42MOHM | ||
| NTLJS3113 | Neu und Original | ||
| NTLJS3113P | Neu und Original | ||
ON Semiconductor |
NTLJS3113PTAG | MOSFET PFET 20V 9.5A 42MOHM 2X2 | |
| NTLJS3113PTAG | MOSFET P-CH 20V 3.5A 6-WDFN | ||
| NTLJS3113PT1G | IGBT Transistors MOSFET PFET 2X2 20V 9.5A 42MOHM |