NTLJS3113P stock, NTLJS3113P, NTLJS3113PT1G


PartNumber	NTLJS3113PT1G	NTLJS3113PTAG	NTLJS3113P
Description	MOSFET PFET 2X2 20V 9.5A 42MOHM	MOSFET PFET 20V 9.5A 42MOHM 2X2
Manufacturer	ON Semiconductor	ON Semiconductor	ON
Product Category	MOSFET	MOSFET	FETs - Single
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	WDFN-6	WDFN-6	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	P-Channel	P-Channel	-
Vds Drain Source Breakdown Voltage	20 V	20 V	-
Id Continuous Drain Current	5.8 A	5.8 A	-
Rds On Drain Source Resistance	90 mOhms	42 mOhms	-
Vgs th Gate Source Threshold Voltage	670 mV	-	-
Vgs Gate Source Voltage	8 V	8 V	-
Qg Gate Charge	13 nC	-	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	1.9 W	1.9 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Packaging	Reel	Reel	-
Height	0.75 mm	0.75 mm	-
Length	2 mm	2 mm	-
Product	MOSFET Small Signal	MOSFET Small Signal	-
Series	NTLJS3113P	-	-
Transistor Type	1 P-Channel	1 P-Channel	-
Width	2 mm	2 mm	-
Brand	ON Semiconductor	ON Semiconductor	-
Forward Transconductance Min	5.9 S	-	-
Fall Time	56.5 ns	17.5 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	17.5 ns	17.5 ns	-
Factory Pack Quantity	3000	3000	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	60 ns	60 ns	-
Typical Turn On Delay Time	6.9 ns	6.9 ns	-
Unit Weight	0.000317 oz	-	-

Search Part Number : "NTLJS3113P", Match & Start with "NTLJS3113P" - Total : 5

Hersteller	Teil #	Beschreibung
	NTLJS3113PT1G	MOSFET PFET 2X2 20V 9.5A 42MOHM
	NTLJS3113P	Neu und Original
ON Semiconductor	NTLJS3113PTAG	MOSFET PFET 20V 9.5A 42MOHM 2X2
	NTLJS3113PTAG	MOSFET P-CH 20V 3.5A 6-WDFN
	NTLJS3113PT1G	IGBT Transistors MOSFET PFET 2X2 20V 9.5A 42MOHM

NTLJS3113P