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SEMIX15

SEMIX151GB12E4V4 vs SEMIX151GB12T4S vs SEMIX151GD126HDS

 
PartNumberSEMIX151GB12E4V4SEMIX151GB12T4SSEMIX151GD126HDS
DescriptionInsulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-ChannelSEMIX, Trench IGBT Module, 1200V, 100A
Hersteller Teil # Beschreibung RFQ
SEMIX151GB12E4V4 Neu und Original
SEMIX151GB12T4S Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel
SEMIX151GD126HDS SEMIX, Trench IGBT Module, 1200V, 100A
SEMIX151GD128DS Neu und Original
SEMIX151GD12E4S IGBT MODULE, SIX, 1.2KV, 232A, Transistor Polarity:Six NPN, DC Collector Current:232A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce
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