SI2

SI2301CDS-T1-GE3 vs SI2301CDS-T1-E3 vs SI2301BDS-T1-GE3

 
PartNumberSI2301CDS-T1-GE3SI2301CDS-T1-E3SI2301BDS-T1-GE3
DescriptionMOSFET -20V Vds 8V Vgs SOT-23MOSFET -20V Vds 8V Vgs SOT-23MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3SOT-23-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage20 V20 V20 V
Id Continuous Drain Current3.1 A3.1 A2.2 A
Rds On Drain Source Resistance112 mOhms112 mOhms100 mOhms
Vgs th Gate Source Threshold Voltage400 mV400 mV450 mV
Vgs Gate Source Voltage4.5 V4.5 V4.5 V
Qg Gate Charge10 nC10 nC4.5 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.6 W1.6 W0.7 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSI2SI2SI2
Transistor Type1 P-Channel1 P-Channel1 P-Channel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min9.5 S9.5 S6.5 S
Fall Time10 ns10 ns20 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time35 ns35 ns40 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time30 ns30 ns30 ns
Typical Turn On Delay Time11 ns11 ns20 ns
Part # AliasesSI2301CDS-GE3SI2301CDS-E3SI2301BDS-GE3
Unit Weight0.000282 oz0.000282 oz0.000282 oz
Height--1.45 mm
Length--2.9 mm
Width--1.6 mm
  • Beginnen mit
  • SI2 1125
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2301CDS-T1-GE3 MOSFET -20V Vds 8V Vgs SOT-23
SI2301CDS-T1-E3 MOSFET -20V Vds 8V Vgs SOT-23
SI2301BDS-T1-GE3 MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V
SI2301CDS-T1-GE3. MOSFET 20V 3.1A 1.6W 112 mohms @ 4.5V
Micro Commercial Components (MCC)
Micro Commercial Components (MCC)
SI2302 MOSFET 20V 3A
SI2302 MOSFET 20V 3A
SI2301DSS-T1-GE3 Neu und Original
SI2301BDS-T1-GE3 , MAX63 Neu und Original
SI2301BDS-TI Neu und Original
SI2301BDS-TI-E3 Neu und Original
SI2301CDS Neu und Original
SI2301CDS-T1-G Neu und Original
SI2301CDS-T1-G3 Neu und Original
SI2301CDS-T1-GE3 (VISHAY Neu und Original
SI2301CDS-T1-GE3 (VISHAY) Neu und Original
SI2301CDS-T1-GE3 , MAX63 Neu und Original
SI2301CDS-TI-GE3 Neu und Original
SI2301DS(A1SHB) Neu und Original
SI2301DS-T1-E3 , MAX6361 Neu und Original
SI2301DS-T1-E3 A1SHB Neu und Original
SI2301DS-T1-E3-- Neu und Original
SI2301DS-T1-E3. Neu und Original
SI2301DS-T1-GE3 (VISHAY) Neu und Original
SI2301DS-TI Neu und Original
SI2301DS-TI-E3/GE3 Neu und Original
SI2301DS/A19T Neu und Original
SI2301NDS-T1-E3 Neu und Original
SI2301SDS-T1-E3 Neu und Original
SI2301W Neu und Original
SI2302 A2 Neu und Original
SI2302(A2SHB) Neu und Original
SI2302-FMS Neu und Original
SI2302-S2 Neu und Original
SI2301CDS-T1-E3-CUT TAPE Neu und Original
SI2301CDS-T1-GE3-CUT TAPE Neu und Original
SI2301CDS-T1 Neu und Original
SI2301DS MOSFET Transistor, P-Channel, TO-236
SI2301DS-E3 Neu und Original
SI2301DS-T Neu und Original
SI2301DS-T1 MOSFET 20V 2.3A 1.25W
SI2301DS-T1-E3 Neu und Original
SI2301DS-T1-GE3 Neu und Original
SI2301DS-TI-E3 Neu und Original
SI2301WCB Neu und Original
SI2302 A2SHB Neu und Original
SI2302(A2) Neu und Original
SI2302(2AVOC) Neu und Original
Vishay
Vishay
SI2301BDS-T1-GE3 MOSFET P-CH 20V 2.2A SOT23-3
SI2301CDS-T1-GE3 MOSFET P-CH 20V 3.1A SOT23-3
SI2301CDS-T1-E3 MOSFET P-CH 20V 3.1A SOT23-3
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