PartNumber | SI4403CDY-T1-GE3 | SI4403BDY-T1-GE3 | SI4403BDY-T1-E3 |
Description | MOSFET 1.8V P-Channel | MOSFET RECOMMENDED ALT 78-SI4403CDY-T1-GE3 | MOSFET RECOMMENDED ALT 78-SI4403CDY-T1-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SO-8 | SO-8 |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 13.4 A | - | - |
Rds On Drain Source Resistance | 15.5 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
Vgs Gate Source Voltage | 4.5 V | - | - |
Qg Gate Charge | 60 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 5 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.75 mm | 1.75 mm | 1.75 mm |
Length | 4.9 mm | 4.9 mm | 4.9 mm |
Series | SI4 | SI4 | SI4 |
Transistor Type | 1 P-Channel | - | - |
Width | 3.9 mm | 3.9 mm | 3.9 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 40 S | - | - |
Fall Time | 40 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 16 ns | - | - |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 101 ns | - | - |
Typical Turn On Delay Time | 14 ns | - | - |
Unit Weight | 0.017870 oz | 0.006596 oz | 0.006596 oz |
Part # Aliases | - | SI4403BDY-GE3 | SI4403BDY-E3 |