 |  | | |
| PartNumber | SIA456DJ-T1-GE3 | SIA456DJ-T1-GE3-CUT TAPE | SIA456 |
| Description | MOSFET 200V Vds 16V Vgs PowerPAK SC-70 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 2.6 A | - | - |
| Rds On Drain Source Resistance | 1.38 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 19 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | - | - |
| Packaging | Reel | - | - |
| Series | SIA | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 5 S | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SIA456DJ-GE3 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIA456DJ-T1-GE3 | MOSFET 200V Vds 16V Vgs PowerPAK SC-70 | |
| SIA456DJ-T3-GE3 | MOSFET 200V Vds 16V Vgs PowerPAK SC-70 | ||
| SIA456DJ-T1-GE3-CUT TAPE | Neu und Original | ||
| SIA456 | Neu und Original | ||
Vishay |
SIA456DJ-T1-GE3 | MOSFET N-CH 200V 2.6A SC70-6 |