| PartNumber | SIHF640S-GE3 | SIHF6N65E-GE3 | SIHF6N40D-E3 |
| Description | MOSFET 200V Vds 20V Vgs D2PAK (TO-263) | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK | MOSFET 400V Vds 30V Vgs TO-220 FULLPAK |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | Through Hole |
| Package / Case | TO-263-3 | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 650 V | 400 V |
| Id Continuous Drain Current | 18 A | 7 A | 6 A |
| Rds On Drain Source Resistance | 180 mOhms | 600 mOhms | 1 Ohms |
| Vgs th Gate Source Threshold Voltage | 2 V | 4 V | 5 V |
| Vgs Gate Source Voltage | 20 V | 30 V | 30 V |
| Qg Gate Charge | 70 nC | 24 nC | 9 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 130 W | 31 W | 30 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Height | 4.83 mm | 15.49 mm | - |
| Length | 10.67 mm | 10.41 mm | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.65 mm | 4.7 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 6.7 S | - | - |
| Fall Time | 36 ns | 20 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 51 ns | 12 ns | 11 ns |
| Factory Pack Quantity | 1 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | 30 ns | 14 ns |
| Typical Turn On Delay Time | 14 ns | 14 ns | 12 ns |
| Packaging | - | Tube | Tube |
| Series | - | E | D |
| Unit Weight | - | 0.211644 oz | 0.211644 oz |