 | | | |
| PartNumber | SIHG44N65EF-GE3 | SIHG460B-GE3 | SIHG40N60E-GE3 |
| Description | MOSFET 650V Vds 30V Vgs TO-247AC | MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS | MOSFET 600V Vds 30V Vgs TO-247AC |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 500 V | 600 V |
| Id Continuous Drain Current | 46 A | 20 A | 40 A |
| Rds On Drain Source Resistance | 63 mOhms | 250 mOhms | 65 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 185 nC | 85 nC | 131 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 417 W | 278 W | 329 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Bulk | Tube |
| Height | 20.82 mm | 20.82 mm | - |
| Length | 15.87 mm | 15.87 mm | - |
| Series | SIH | D | E |
| Width | 5.31 mm | 5.31 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 100 ns | 56 ns | 66 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 77 ns | 31 ns | 71 ns |
| Factory Pack Quantity | 500 | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 157 ns | 117 ns | 127 ns |
| Typical Turn On Delay Time | 46 ns | 24 ns | 35 ns |
| Unit Weight | 0.211644 oz | 1.340411 oz | 0.211644 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHG47N60AEF-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | |
| SIHG47N60AEL-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| SIHG47N60AE-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| SIHG44N65EF-GE3 | MOSFET 650V Vds 30V Vgs TO-247AC | ||
| SIHG47N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-247AC | ||
| SIHG47N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| SIHG47N60E-E3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
| SIHG47N60EF-GE3 | MOSFET RECOMMENDED ALT 78-SIHW47N60EF-GE3 | ||
| SIHG460B-GE3 | MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS | ||
| SIHG40N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-247AC | ||
Vishay |
SIHG460B-GE3 | IGBT Transistors MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS | |
| SIHG47N60E-E3 | IGBT Transistors MOSFET 600V 64mOhm@10V 47A N-Ch E-SRS | ||
| SIHG47N60EF-GE3 | IGBT Transistors MOSFET 600V 67mOhms@10V 47A N-Ch EF-SRS | ||
| SIHG47N65E-GE3 | RF Bipolar Transistors MOSFET 650V 72mOhm@10V 47A N-Ch E-SRS | ||
| SIHG44N65EF-GE3 | MOSFET N-CH 650V 46A TO247AC | ||
| SIHG47N60AEL-GE3 | MOSFET N-CHAN 600V | ||
| SIHG47N60E-GE3 | MOSFET N-CH 600V 47A TO247AC | ||
| SIHG47N60AE-GE3 | MOSFET N-CH 600V 43A TO247AC | ||
| SIHG40N60E-GE3 | E Series Power MOSFET | ||
| SIHG47N60S-E3 | IGBT Transistors MOSFET N-CHANNEL 600V | ||
| SIHG460BGE3 | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | ||
| SIHG47N605 | Neu und Original | ||
| SIHG47N60E | Neu und Original | ||
| SIHG47N60E-GE3 G47N60E | Neu und Original | ||
| SIHG47N60E-GE3,SIHG47N60 | Neu und Original | ||
| SIHG47N60EF | Neu und Original | ||
| SIHG47N60EGE3 | Power Field-Effect Transistor, 47A I(D), 600V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | ||
| SIHG47N60S | Neu und Original | ||
| SIHG47N60S-E3,G47N60S,SI | Neu und Original | ||
| SIHG47N60S-E3,SIHG47N60S | Neu und Original | ||
| SIHG47N65E | Neu und Original | ||
| SIHG47N80S-E3 | Neu und Original |