 |  | | |
| PartNumber | SPD15P10PL G | SPD15P10PL IRFR5410TRP | SPD15P10PL//SPD15P10PL P |
| Description | MOSFET P-Ch -100V 15A DPAK-2 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 15 A | - | - |
| Rds On Drain Source Resistance | 140 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 62 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 128 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | SIPMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | SPD15P10 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 5.5 S | - | - |
| Fall Time | 29 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 21 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50 ns | - | - |
| Typical Turn On Delay Time | 7.6 ns | - | - |
| Part # Aliases | SP000317393 SPD15P10PLGBTMA1 SPD15P1PLGXT | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD15P10PLGBTMA1 | MOSFET P-Ch -100V 15A DPAK-2 | |
| SPD15P10PL G | MOSFET P-Ch -100V 15A DPAK-2 | ||
| SPD15P10PLGBTMA1 | MOSFET P-CH 100V 15A TO252-3 | ||
| SPD15P10PL IRFR5410TRP | Neu und Original | ||
| SPD15P10PL G | MOSFET P-Ch -100V 15A DPAK-2 | ||
| SPD15P10PL//SPD15P10PL P | Neu und Original | ||
| SPD15P10PLG | Neu und Original |