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| PartNumber | SQS481ENW-T1_GE3 | SQS482EN-T1_GE3 | SQS482EN-T1-GE3 |
| Description | MOSFET -150V Vds PowerPAK AEC-Q101 Qualified | MOSFET 30V 16A 62W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 781-SQS482EN-T1_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | 30 V | - |
| Id Continuous Drain Current | 16 A | 16 A | - |
| Rds On Drain Source Resistance | 1.095 Ohms | 7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 8 nC | 39 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 62.5 W | 62 W | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 P-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 2.6 ns | 18 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.3 ns | 21 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15.3 ns | 49 ns | - |
| Typical Turn On Delay Time | 7.1 ns | 7 ns | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 1.04 mm | 1.04 mm |
| Length | - | 3.3 mm | 3.3 mm |
| Width | - | 3.3 mm | 3.3 mm |
| Forward Transconductance Min | - | 70 S | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQS482ENW-T1_GE3 | MOSFET 30V Vds -/+20V Vgs PowerPAK 1212-8W | |
| SQS481ENW-T1_GE3 | MOSFET -150V Vds PowerPAK AEC-Q101 Qualified | ||
| SQS484ENW-T1_GE3 | MOSFET N-Channel 40V PowerPAK 1212-8W | ||
| SQS482EN-T1_GE3 | MOSFET 30V 16A 62W AEC-Q101 Qualified | ||
| SQS484EN-T1_GE3 | MOSFET 40V 16A 62W AEC-Q101 Qualified | ||
| SQS482EN-T1-GE3 | MOSFET RECOMMENDED ALT 781-SQS482EN-T1_GE3 | ||
| SQS482EN-T1-GE3 | IGBT Transistors MOSFET 30V 16A 62W TrenchFET | ||
| SQS481ENW-T1-GE3 | Neu und Original | ||
| SQS484EN-T1-GE3 | Trans MOSFET N-CH 40V 16A Automotive 8-Pin PowerPAK 1212 EP T/R | ||
| SQS484ENT1GE3 | Power Field-Effect Transistor, 16A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQS484ENW-T1-GE3 | Neu und Original | ||
Vishay |
SQS482EN-T1_GE3 | MOSFET N-CH 30V 16A 1212-8 | |
| SQS481ENW-T1_GE3 | MOSFET P-CH 150V 4.7A 1212-8 | ||
| SQS484EN-T1_GE3 | MOSFET N-CH 40V 16A 1212-8 | ||
| SQS484ENW-T1_GE3 | MOSFET N-CH 40V 16A POWERPAK1212 |