 |  | | |
| PartNumber | SSM3J35AFS,LF | SSM3J35AFS | SSM3J35AMFV |
| Description | MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-416-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 250 mA | - | - |
| Rds On Drain Source Resistance | 1.1 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Toshiba | - | - |
| Forward Transconductance Min | 430 mS | - | - |
| Fall Time | 145 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 42 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 420 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Unit Weight | 0.000085 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
SSM3J35AMFV,L3F | MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V | |
| SSM3J35AFS,LF | MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V | ||
| SSM3J35AFS | Neu und Original | ||
| SSM3J35AMFV | Neu und Original |