PartNumber | SSM6N37CTD(TPL3) | SSM6N37FE | SSM6N37CTD |
Description | MOSFET N-Ch Sm Sig FET 0.25A 20V 2-in-1 | ||
Manufacturer | Toshiba Semiconductor and Storage | TOSHIBA | - |
Product Category | FETs - Arrays | FETs - Arrays | - |
Series | - | - | - |
Packaging | Digi-ReelR Alternate Packaging | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | 6-SMD, Flat Leads | - | - |
Technology | Si | - | - |
Operating Temperature | 150°C (TJ) | - | - |
Mounting Type | Surface Mount | - | - |
Number of Channels | 2 Channel | - | - |
Supplier Device Package | CST6D | - | - |
Configuration | Dual | - | - |
FET Type | 2 N-Channel (Dual) | - | - |
Power Max | 140mW | - | - |
Transistor Type | 2 N-Channel | - | - |
Drain to Source Voltage Vdss | 20V | - | - |
Input Capacitance Ciss Vds | 12pF @ 10V | - | - |
FET Feature | Logic Level Gate | - | - |
Current Continuous Drain Id 25°C | 250mA | - | - |
Rds On Max Id Vgs | 2.2 Ohm @ 100mA, 4.5V | - | - |
Vgs th Max Id | 1V @ 1mA | - | - |
Gate Charge Qg Vgs | - | - | - |
Pd Power Dissipation | 140 mW | - | - |
Id Continuous Drain Current | 250 mA | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Rds On Drain Source Resistance | 3.07 Ohms | - | - |
Transistor Polarity | N-Channel | - | - |
Typical Turn Off Delay Time | 36 ns | - | - |
Typical Turn On Delay Time | 18 ns | - | - |