 |  | | |
| PartNumber | TK8Q60W,S1VQ | TK8Q60V | TK8Q60W |
| Description | MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 420 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 18.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 80 W | - | - |
| Configuration | Single | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 6.1 mm | - | - |
| Length | 6.65 mm | - | - |
| Series | TK8Q60W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 2.3 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 5.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
TK8Q60W,S1VQ | MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | |
| TK8Q65W,S1Q | MOSFET Power MOSFET N-Channel | ||
| TK8Q60W,S1VQ | Darlington Transistors MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | ||
| TK8Q60V | Neu und Original | ||
| TK8Q60W | Neu und Original | ||
| TK8Q60W,S1VQ(S | Neu und Original | ||
| TK8Q60WS1VQ | Trans MOSFET N 600V 8A 3-Pin IPAK Tube - Rail/Tube (Alt: TK8Q60W,S1VQ) | ||
| TK8Q65W | Neu und Original | ||
| TK8Q65WS1Q | Neu und Original | ||
| TK8Q60WS1VQ-ND | Neu und Original | ||
| TK8Q65WS1Q-ND | Neu und Original |