TSM65

TSM6502CR RLG vs TSM650N15CR RLG vs TSM650N15CS RLG

 
PartNumberTSM6502CR RLGTSM650N15CR RLGTSM650N15CS RLG
DescriptionMOSFET N&P Channel Power MOSFETMOSFET 150V, 24A, Single N- Channel Power MOSFETMOSFET 150V, 9A, 65mohm, N-Channel Power MOSFET
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePDFN56-8PDFN56-8SOP-8
Number of Channels2 Channel1 Channel1 Channel
Transistor PolarityN-Channel, P-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V150 V150 V
Id Continuous Drain Current5.4 A, 4 A24 A9 A
Rds On Drain Source Resistance28 mOhms, 73 mOhms-51 mOhms
Vgs th Gate Source Threshold Voltage1.2 V2 V2 V
Vgs Gate Source Voltage10 V, - 4.5 V10 V10 V
Qg Gate Charge20.8 nC, 9.5 nC36 nC37 nC
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation40 W96 W12.5 W
ConfigurationDualSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Transistor Type1 N-Channel, 1 P-Channel1 N-Channel1 N-Channel
BrandTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Fall Time18 ns, 44 ns4.8 ns11 ns
Moisture SensitiveYes--
Product TypeMOSFETMOSFETMOSFET
Rise Time25 ns, 28 ns6.4 ns5 ns
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time18 ns, 44 ns19.4 ns17 ns
Typical Turn On Delay Time7.4 ns, 4 ns9.4 ns7 ns
Forward Transconductance Min-11 S-
Unit Weight--0.000282 oz
Hersteller Teil # Beschreibung RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM6502CR RLG MOSFET N&P Channel Power MOSFET
TSM650N15CR RLG MOSFET 150V, 24A, Single N- Channel Power MOSFET
TSM650P03CX RFG MOSFET 30V P channel Power Mosfet
TSM650P02CX RFG MOSFET 20V P channel Power Mosfet
TSM650N15CS RLG MOSFET 150V, 9A, 65mohm, N-Channel Power MOSFET
TSM65686-E Neu und Original
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