ZXMN2B0

ZXMN2B01FTA vs ZXMN2B03E6 vs ZXMN2B01FTA-CUT TAPE

 
PartNumberZXMN2B01FTAZXMN2B03E6ZXMN2B01FTA-CUT TAPE
DescriptionMOSFET 20V N-Channel MOSFET w/low gate drive cap
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current2.4 A--
Rds On Drain Source Resistance100 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge4.8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation806 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.02 mm--
Length3.04 mm--
ProductMOSFET Small Signal--
SeriesZXMN2B01--
Transistor Type1 N-Channel--
Width1.4 mm--
BrandDiodes Incorporated--
Forward Transconductance Min6.1 S--
Fall Time10.5 ns--
Product TypeMOSFET--
Rise Time3.6 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17.8 ns--
Typical Turn On Delay Time3.6 ns--
Unit Weight0.000282 oz--
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
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ZXMN2B03E6 Neu und Original
ZXMN2B01FTA-CUT TAPE Neu und Original
ZXMN2B03E6TA-CUT TAPE Neu und Original
ZXMN2B03E6TA Darlington Transistors MOSFET 20V N-Ch 4.6 MOSFET w/low gate drive cap
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