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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMV07N60S1HF-P DISTI # FE0000000004685 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV07N60S1HF-S25PP-P DISTI # FE0000000004686 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FMV07N50E OMO.#: OMO-FMV07N50E-1190 |
Neu und Original |
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Mfr.#: FMV07N60S1 OMO.#: OMO-FMV07N60S1-1190 |
Neu und Original |
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Mfr.#: FMV07N60S1HF OMO.#: OMO-FMV07N60S1HF-1190 |
Neu und Original |
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Mfr.#: FMV07N65E OMO.#: OMO-FMV07N65E-1190 |
Power Field-Effect Transistor, 11A I(D), 900V,1ohm,1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMV07N70E OMO.#: OMO-FMV07N70E-1190 |
Power Field-Effect Transistor, 17A I(D),600V,0.4ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMV07N90E OMO.#: OMO-FMV07N90E-1190 |
Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET |