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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMV07N60S1-P DISTI # FE0000000000243 | Fuji Electric Co Ltd | Power Field-Effect Transistor RoHS: Not Compliant | 0 in Stock0 on Order |
|
| FMV07N60S1HF-P DISTI # FE0000000004685 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV07N60S1HF-S25PP-P DISTI # FE0000000004686 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV07N60S1-S25PPSC-P DISTI # FE0000000004684 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FMV07N50E OMO.#: OMO-FMV07N50E-1190 |
Neu und Original |
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Mfr.#: FMV07N60S1 OMO.#: OMO-FMV07N60S1-1190 |
Neu und Original |
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Mfr.#: FMV07N60S1HF OMO.#: OMO-FMV07N60S1HF-1190 |
Neu und Original |
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Mfr.#: FMV07N65E OMO.#: OMO-FMV07N65E-1190 |
Power Field-Effect Transistor, 11A I(D), 900V,1ohm,1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMV07N70E OMO.#: OMO-FMV07N70E-1190 |
Power Field-Effect Transistor, 17A I(D),600V,0.4ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMV07N90E OMO.#: OMO-FMV07N90E-1190 |
Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET |