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SI2307DS-T1

SI2307DS-T1
Mfr. #:
SI2307DS-T1
Hersteller:
SI
Beschreibung:
MOSFET RECOMMENDED ALT 781-SI2307BDS-E3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2307DS-T1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
SI
Produktkategorie
IC-Chips
Tags
SI2307DS-T1, SI2307DS-T, SI2307D, SI2307, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power; P-Channel; -30 V; 20 V; -3 A; 1.25 W; -55 to 150 degC; 130 degC
***fin
Transistor PNP Mos SI2307DS/SI2307DS/T1 SILICONIX Ampere=3 V=30 SOt23
***eco
P-CH MOSFET SOT-23 30V 80MOHM @ 10V
***ser
P-Channel MOSFETs 30V 3.0A 1.25W
***ark
MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-3A; On-Resistance, Rds(on):0.14ohm; Package/Case:SOT-23; Leaded Process Compatible:No; Mounting Type:Surface Mount; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Teil # Mfg. Beschreibung Aktie Preis
SI2307DS-T1
DISTI # 781-SI2307DS		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2307BDS-E3
RoHS: Not compliant		0
    SI2307DS-T1-E3
    DISTI # 781-SI2307DS-E3    		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2307BDS-E3
    RoHS: Compliant    		0
      SI2307DS-T1Vishay Siliconix 2888
        SI2307DS-T1-E3Vishay Siliconix 11557
          SI2307DS-T1SILI 1366
            SI2307DS-T1Vishay Intertechnologies 1552
              SI2307DS-T1Unknown*** FREE SHIPPING ORDERS OVER $100 *** POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 30V, 0.08OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236644
              • 243:$0.6600
              • 62:$0.8250
              • 1:$1.6500
              SI2307DS-T1Vishay Siliconix*** FREE SHIPPING ORDERS OVER $100 *** POWER FIELD-EFFECT TRANSISTOR, 3A I(D), 30V, 0.08OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-2367756
              • 779:$2.3370
              • 348:$2.5707
              • 1:$4.6740
              SI2307DS-T1-E3Vishay Siliconix*** FREE SHIPPING ORDERS OVER $100 *** 3A, 30V, 0.08OHM, P-CHANNEL, SI, POWER, MOSFET, TO-2362977
              • 2728:$0.5250
              • 1281:$0.5500
              • 1:$2.0000
              Bild Teil # Beschreibung
              SI2308BDS-T1-E3

              Mfr.#: SI2308BDS-T1-E3

              OMO.#: OMO-SI2308BDS-T1-E3

              		 MOSFET 60V Vds 20V Vgs SOT-23
              SI2308DS-T1-E3

              Mfr.#: SI2308DS-T1-E3

              OMO.#: OMO-SI2308DS-T1-E3

              		 MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
              SI2300A

              Mfr.#: SI2300A

              OMO.#: OMO-SI2300A-1190

              		 Neu und Original
              SI2301A1SHB

              Mfr.#: SI2301A1SHB

              OMO.#: OMO-SI2301A1SHB-1190

              		 Neu und Original
              SI2302A-TP

              Mfr.#: SI2302A-TP

              OMO.#: OMO-SI2302A-TP-MICRO-COMMERCIAL-COMPONENTS

              		 N-CHANNEL,MOSFETS,SOT-23 PACKAGE
              SI2303ADS

              Mfr.#: SI2303ADS

              OMO.#: OMO-SI2303ADS-1190

              		 Neu und Original
              SI2303CDS-TI-GE3

              Mfr.#: SI2303CDS-TI-GE3

              OMO.#: OMO-SI2303CDS-TI-GE3-1190

              		 Neu und Original
              SI2305DY-T1-E3

              Mfr.#: SI2305DY-T1-E3

              OMO.#: OMO-SI2305DY-T1-E3-1190

              		 Neu und Original
              SI2307DS-T1-GE3

              Mfr.#: SI2307DS-T1-GE3

              OMO.#: OMO-SI2307DS-T1-GE3-1190

              		 Neu und Original
              SI2309DS-T1-GE3

              Mfr.#: SI2309DS-T1-GE3

              OMO.#: OMO-SI2309DS-T1-GE3-1190

              		 P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs
              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              1000
              Menge eingeben:
              Der aktuelle Preis von SI2307DS-T1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
              Referenzpreis (USD)
              Menge
              Stückpreis
              ext. Preis
              1
              0,99 $
              0,99 $
              10
              0,94 $
              9,40 $
              100
              0,89 $
              89,10 $
              500
              0,84 $
              420,75 $
              1000
              0,79 $
              792,00 $
              Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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