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Teil # | Mfg. | Beschreibung | Aktie | Preis |
---|---|---|---|---|
BSZ180P03NS3EGATMA1 DISTI # V72:2272_06390926 | Infineon Technologies AG | Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP T/R RoHS: Compliant | 5000 |
|
BSZ180P03NS3EGATMA1 DISTI # V36:1790_06390926 | Infineon Technologies AG | Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP T/R RoHS: Compliant | 0 |
|
BSZ180P03NS3EGATMA1 DISTI # BSZ180P03NS3EGATMA1TR-ND | Infineon Technologies AG | MOSFET P-CH 30V 39.6A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 5000In Stock |
|
BSZ180P03NS3EGATMA1 DISTI # BSZ180P03NS3EGATMA1CT-ND | Infineon Technologies AG | MOSFET P-CH 30V 39.6A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 5000In Stock |
|
BSZ180P03NS3EGATMA1 DISTI # BSZ180P03NS3EGATMA1DKR-ND | Infineon Technologies AG | MOSFET P-CH 30V 39.6A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 5000In Stock |
|
BSZ180P03NS3EGATMA1 DISTI # 33156600 | Infineon Technologies AG | Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP T/R RoHS: Compliant | 5000 |
|
BSZ180P03NS3EGATMA1 DISTI # SP000709740 | Infineon Technologies AG | Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: SP000709740) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 5000 |
|
BSZ180P03NS3EGATMA1 DISTI # BSZ180P03NS3EGATMA1 | Infineon Technologies AG | Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ180P03NS3EGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
BSZ180P03NS3EGATMA1 DISTI # 97Y1272 | Infineon Technologies AG | MOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-39.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,RoHS Compliant: Yes | 150 |
|
BSZ180P03NS3E G DISTI # 726-BSZ180P03NS3EG | Infineon Technologies AG | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 RoHS: Compliant | 5000 |
|
BSZ180P03NS3EGATMA1 DISTI # 726-BSZ180P03NS3EGAT | Infineon Technologies AG | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 RoHS: Compliant | 0 |
|
BSZ180P03NS3EGATMA1 DISTI # 2617460 | Infineon Technologies AG | MOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8 RoHS: Compliant | 135 |
|
BSZ180P03NS3EGATMA1 DISTI # 2617460 | Infineon Technologies AG | MOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8 | 289 |
|
Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: BSZ180P03NS3E G OMO.#: OMO-BSZ180P03NS3E-G |
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | |
Mfr.#: BSZ180P03NS3GATMA1 OMO.#: OMO-BSZ180P03NS3GATMA1 |
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | |
Mfr.#: BSZ180P03NS3 G OMO.#: OMO-BSZ180P03NS3-G |
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | |
Mfr.#: BSZ180P03NS3EGATMA1 OMO.#: OMO-BSZ180P03NS3EGATMA1 |
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | |
Mfr.#: BSZ180P03NS3 G OMO.#: OMO-BSZ180P03NS3-G-1190 |
Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: BSZ180P03NS3 G) | |
Mfr.#: BSZ180P03NS3E G OMO.#: OMO-BSZ180P03NS3E-G-1190 |
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | |
Mfr.#: BSZ180P03NS3EG OMO.#: OMO-BSZ180P03NS3EG-1190 |
Transistor MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: BSZ180P03NS3E G) | |
Mfr.#: BSZ180P03NS3EGATMA1 |
MOSFET P-CH 30V 39.6A TSDSON-8 | |
Mfr.#: BSZ180P03NS3G OMO.#: OMO-BSZ180P03NS3G-1190 |
Neu und Original | |
Mfr.#: BSZ180P03NS3GATMA1 |
MOSFET P-CH 30V 39.6A TSDSON-8 |