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BSZ180P03NS3E G

BSZ180P03NS3E G
Mfr. #:
BSZ180P03NS3E G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSZ180P03NS3E G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TSDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
39.6 A
Rds On - Drain-Source-Widerstand:
13.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.1 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
30 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
40 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
3.3 mm
Serie:
OptiMOS P3
Transistortyp:
1 P-Channel
Breite:
3.3 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
18 S
Abfallzeit:
3 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
BSZ180P03NS3EGATMA1 BSZ18P3NS3EGXT SP000709740
Tags
BSZ180P03NS3E, BSZ18, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSZ180P03NS3EGATMA1
DISTI # V72:2272_06390926		Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 3000:$0.2335
  • 1000:$0.2595
  • 500:$0.2890
  • 250:$0.3212
  • 100:$0.3330
  • 25:$0.5179
  • 10:$0.5762
  • 1:$0.6927
BSZ180P03NS3EGATMA1
DISTI # V36:1790_06390926		Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP T/R
RoHS: Compliant		0
  • 5000000:$0.2009
  • 2500000:$0.2011
  • 500000:$0.2161
  • 50000:$0.2405
  • 5000:$0.2445
BSZ180P03NS3EGATMA1
DISTI # BSZ180P03NS3EGATMA1TR-ND		Infineon Technologies AGMOSFET P-CH 30V 39.6A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 25000:$0.2294
  • 10000:$0.2355
  • 5000:$0.2445
BSZ180P03NS3EGATMA1
DISTI # BSZ180P03NS3EGATMA1CT-ND		Infineon Technologies AGMOSFET P-CH 30V 39.6A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5000In Stock
  • 1000:$0.2985
  • 500:$0.3731
  • 100:$0.4720
  • 10:$0.6160
  • 1:$0.7000
BSZ180P03NS3EGATMA1
DISTI # BSZ180P03NS3EGATMA1DKR-ND		Infineon Technologies AGMOSFET P-CH 30V 39.6A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5000In Stock
  • 1000:$0.2985
  • 500:$0.3731
  • 100:$0.4720
  • 10:$0.6160
  • 1:$0.7000
BSZ180P03NS3E G
DISTI # 33642330		Infineon Technologies AG05000
  • 31:$0.8125
BSZ180P03NS3EGATMA1
DISTI # 33156600		Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 37:$0.6927
BSZ180P03NS3EGATMA1
DISTI # SP000709740		Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: SP000709740)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 5000
  • 50000:€0.2029
  • 30000:€0.2179
  • 20000:€0.2429
  • 10000:€0.2729
  • 5000:€0.3219
BSZ180P03NS3EG
DISTI # BSZ180P03NS3E G		Infineon Technologies AGTransistor MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: BSZ180P03NS3E G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 250000:$0.1709
  • 125000:$0.1731
  • 50000:$0.1753
  • 25000:$0.1776
  • 15000:$0.1824
  • 10000:$0.1875
  • 5000:$0.1929
BSZ180P03NS3EGATMA1
DISTI # BSZ180P03NS3EGATMA1		Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ180P03NS3EGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.1749
  • 30000:$0.1779
  • 20000:$0.1839
  • 10000:$0.1909
  • 5000:$0.1979
BSZ180P03NS3EGATMA1
DISTI # 97Y1272		Infineon Technologies AGMOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-39.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,RoHS Compliant: Yes150
  • 1000:$0.2790
  • 500:$0.3020
  • 250:$0.3250
  • 100:$0.3480
  • 50:$0.4120
  • 25:$0.4760
  • 10:$0.5400
  • 1:$0.6460
BSZ180P03NS3E G
DISTI # 726-BSZ180P03NS3EG		Infineon Technologies AGMOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
RoHS: Compliant		5000
  • 1:$0.6400
  • 10:$0.5350
  • 100:$0.3450
  • 1000:$0.2760
  • 5000:$0.2330
BSZ180P03NS3EGATMA1
DISTI # 726-BSZ180P03NS3EGAT		Infineon Technologies AGMOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
RoHS: Compliant		0
  • 1:$0.6400
  • 10:$0.5350
  • 100:$0.3450
  • 1000:$0.2760
  • 5000:$0.2330
  • 10000:$0.2250
  • 25000:$0.2160
BSZ180P03NS3EGATMA1
DISTI # 2617460		Infineon Technologies AGMOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8289
  • 500:£0.2330
  • 250:£0.2500
  • 100:£0.2680
  • 10:£0.4610
  • 1:£0.5700
BSZ180P03NS3E G
DISTI # C1S322000192957		Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP
RoHS: Compliant		5000
  • 5000:$0.2760
  • 1000:$0.3110
  • 500:$0.3360
  • 100:$0.4150
  • 50:$0.4540
  • 10:$0.6500
BSZ180P03NS3EGATMA1
DISTI # 2617460		Infineon Technologies AGMOSFET, P-CH, -30V, -39.6A, PG-TSDSON-8
RoHS: Compliant		135
  • 1000:$0.4780
  • 500:$0.5970
  • 100:$0.8060
  • 10:$1.0600
  • 1:$1.2000
Bild Teil # Beschreibung
BSZ180P03NS3E G

Mfr.#: BSZ180P03NS3E G

OMO.#: OMO-BSZ180P03NS3E-G

 MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
BSZ180P03NS3GATMA1

Mfr.#: BSZ180P03NS3GATMA1

OMO.#: OMO-BSZ180P03NS3GATMA1

 MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
BSZ180P03NS3 G

Mfr.#: BSZ180P03NS3 G

OMO.#: OMO-BSZ180P03NS3-G

 MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
BSZ180P03NS3EGATMA1

Mfr.#: BSZ180P03NS3EGATMA1

OMO.#: OMO-BSZ180P03NS3EGATMA1

 MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
BSZ180P03NS3 G

Mfr.#: BSZ180P03NS3 G

OMO.#: OMO-BSZ180P03NS3-G-1190

 Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: BSZ180P03NS3 G)
BSZ180P03NS3E G

Mfr.#: BSZ180P03NS3E G

OMO.#: OMO-BSZ180P03NS3E-G-1190

 MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
BSZ180P03NS3EG

Mfr.#: BSZ180P03NS3EG

OMO.#: OMO-BSZ180P03NS3EG-1190

 Transistor MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: BSZ180P03NS3E G)
BSZ180P03NS3EGATMA1

Mfr.#: BSZ180P03NS3EGATMA1

OMO.#: OMO-BSZ180P03NS3EGATMA1-INFINEON-TECHNOLOGIES

 MOSFET P-CH 30V 39.6A TSDSON-8
BSZ180P03NS3G

Mfr.#: BSZ180P03NS3G

OMO.#: OMO-BSZ180P03NS3G-1190

 Neu und Original
BSZ180P03NS3GATMA1

Mfr.#: BSZ180P03NS3GATMA1

OMO.#: OMO-BSZ180P03NS3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET P-CH 30V 39.6A TSDSON-8
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von BSZ180P03NS3E G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,64 $
0,64 $
10
0,53 $
5,35 $
100
0,34 $
34,50 $
1000
0,28 $
276,00 $
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