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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFD8P05SM9A | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 3171 |
|
| RFD8P05SM9AS2463 | Harris Semiconductor | RoHS: Not Compliant | 2500 |
|
| RFD8P05SM9A DISTI # 512-RFD8P05SM9A | ON Semiconductor | MOSFET TO-252 RoHS: Not compliant | 0 | |
| RFD8P05SM9A | HARTING Technology Group | RoHS: Not Compliant | Europe - 54200 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RFD8P03 OMO.#: OMO-RFD8P03-1190 |
Neu und Original |
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Mfr.#: RFD8P05SM |
MOSFET P-CH 50V 8A TO-252AA |
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Mfr.#: RFD8P05SM (TO-251) OMO.#: OMO-RFD8P05SM-TO-251--1190 |
Neu und Original |
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Mfr.#: RFD8P05SM96 OMO.#: OMO-RFD8P05SM96-1190 |
Neu und Original |
|
|
Mfr.#: RFD8P05SM9A OMO.#: OMO-RFD8P05SM9A-1190 |
Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
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Mfr.#: RFD8P06ESM9A OMO.#: OMO-RFD8P06ESM9A-1190 |
(Alt: RFD8P06ESM9A) |
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Mfr.#: RFD8P06LE OMO.#: OMO-RFD8P06LE-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: RFD8P06LESM OMO.#: OMO-RFD8P06LESM-1190 |
8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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Mfr.#: RFD8P06LESM9AR4407 OMO.#: OMO-RFD8P06LESM9AR4407-1190 |
Neu und Original |
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Mfr.#: RFD8P06SM OMO.#: OMO-RFD8P06SM-1190 |
Neu und Original |
