RFD8P05 stock, RFD8P05, RFD8P05


PartNumber	RFD8P05	RFD8P05SM
Description	MOSFET TO-251AA P-Ch Power	MOSFET TO-252AA P-Ch Power
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	MOSFET	MOSFET
RoHS	N	N
Technology	Si	Si
Mounting Style	Through Hole	SMD/SMT
Package / Case	TO-251-3	TO-252-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	P-Channel	P-Channel
Vds Drain Source Breakdown Voltage	50 V	50 V
Id Continuous Drain Current	8 A	8 A
Rds On Drain Source Resistance	300 mOhms	300 mOhms
Vgs Gate Source Voltage	20 V	20 V
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	48 W	48 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Height	6.3 mm	2.39 mm
Length	6.8 mm	6.73 mm
Transistor Type	1 P-Channel	1 P-Channel
Width	2.5 mm	6.22 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Fall Time	20 ns	20 ns
Product Type	MOSFET	MOSFET
Rise Time	30 ns	30 ns
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	42 ns	42 ns
Typical Turn On Delay Time	16 ns	16 ns
Unit Weight	0.139332 oz	0.139332 oz

Search Part Number : "RFD8P05", Match & Start with "RFD8P05" - Total : 8

Hersteller	Teil #	Beschreibung
ON Semiconductor / Fairchild	RFD8P05	MOSFET TO-251AA P-Ch Power
ON Semiconductor / Fairchild	RFD8P05SM	MOSFET TO-252AA P-Ch Power
ON Semiconductor	RFD8P05	MOSFET P-CH 50V 8A I-PAK
ON Semiconductor	RFD8P05SM	MOSFET P-CH 50V 8A TO-252AA
	RFD8P05SM (TO-251)	Neu und Original
	RFD8P05SM96	Neu und Original
	RFD8P05SM9A	Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
	RFD8P05SM9AS2385	Neu und Original

RFD8P05