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RFD8P05SM

RFD8P05SM
Mfr. #:
RFD8P05SM
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET TO-252AA P-Ch Power
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RFD8P05SM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RFD8P05SM DatasheetRFD8P05SM Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
N
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
50 V
Id - Kontinuierlicher Drainstrom:
8 A
Rds On - Drain-Source-Widerstand:
300 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
48 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Höhe:
2.39 mm
Länge:
6.73 mm
Transistortyp:
1 P-Channel
Breite:
6.22 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
30 ns
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
42 ns
Typische Einschaltverzögerungszeit:
16 ns
Gewichtseinheit:
0.139332 oz
Tags
RFD8P05S, RFD8P05, RFD8P0, RFD8P, RFD8, RFD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Not available to order TO-252AA P-Ch Power
***i-Key
MOSFET P-CH 50V 8A TO-252AA
Teil # Mfg. Beschreibung Aktie Preis
RFD8P05SM
DISTI # RFD8P05SM-ND		ON SemiconductorMOSFET P-CH 50V 8A TO-252AA
RoHS: Not compliant
Min Qty: 1800
Container: Tube		Limited Supply - Call
    RFD8P05SMFairchild Semiconductor CorporationPower Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Not Compliant    		3600
    • 1000:$0.2200
    • 500:$0.2300
    • 100:$0.2400
    • 25:$0.2500
    • 1:$0.2700
    RFD8P05SM9AHarris SemiconductorPower Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Not Compliant    		3171
    • 1000:$0.9400
    • 500:$0.9900
    • 100:$1.0300
    • 25:$1.0800
    • 1:$1.1600
    RFD8P05SM9AS2463Harris Semiconductor 
    RoHS: Not Compliant    		2500
    • 1000:$0.4700
    • 500:$0.5000
    • 100:$0.5200
    • 25:$0.5400
    • 1:$0.5800
    RFD8P05SM
    DISTI # 512-RFD8P05SM    		ON SemiconductorMOSFET TO-252AA P-Ch Power
    RoHS: Not compliant    		0
      RFD8P05SM9A
      DISTI # 512-RFD8P05SM9A      		ON SemiconductorMOSFET TO-252
      RoHS: Not compliant      		0
        RFD8P05SMHarris Semiconductor8 A, 50 V, 0.3 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-252AA431
        • 297:$0.9375
        • 134:$1.0125
        • 1:$2.2500
        RFD8P05SMHARTING Technology Group 
        RoHS: Not Compliant        		Europe - 3017
          RFD8P05SM96HARTING Technology Group 
          RoHS: Not Compliant          		Europe - 750
            RFD8P05SM9AHARTING Technology Group 
            RoHS: Not Compliant            		Europe - 54200
              RFD8P05SMHarris SemiconductorINSTOCK3751
                Bild Teil # Beschreibung
                RFD8P05

                Mfr.#: RFD8P05

                OMO.#: OMO-RFD8P05

                		 MOSFET TO-251AA P-Ch Power
                RFD8P03

                Mfr.#: RFD8P03

                OMO.#: OMO-RFD8P03-1190

                		 Neu und Original
                RFD8P05SM

                Mfr.#: RFD8P05SM

                OMO.#: OMO-RFD8P05SM-ON-SEMICONDUCTOR

                		 MOSFET P-CH 50V 8A TO-252AA
                RFD8P05SM96

                Mfr.#: RFD8P05SM96

                OMO.#: OMO-RFD8P05SM96-1190

                		 Neu und Original
                RFD8P05SM9A

                Mfr.#: RFD8P05SM9A

                OMO.#: OMO-RFD8P05SM9A-1190

                		 Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
                RFD8P06ESM

                Mfr.#: RFD8P06ESM

                OMO.#: OMO-RFD8P06ESM-1190

                		 Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
                RFD8P06ESM9A

                Mfr.#: RFD8P06ESM9A

                OMO.#: OMO-RFD8P06ESM9A-1190

                		 (Alt: RFD8P06ESM9A)
                RFD8P06LE

                Mfr.#: RFD8P06LE

                OMO.#: OMO-RFD8P06LE-1190

                		 Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
                RFD8P06LESM

                Mfr.#: RFD8P06LESM

                OMO.#: OMO-RFD8P06LESM-1190

                		 8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
                RFD8P06LESM9A

                Mfr.#: RFD8P06LESM9A

                OMO.#: OMO-RFD8P06LESM9A-1190

                		 - Bulk (Alt: RFD8P06LESM9A)
                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                2000
                Menge eingeben:
                Der aktuelle Preis von RFD8P05SM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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