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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFD8P05SM96 | HARTING Technology Group | RoHS: Not Compliant | 750 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RFD8P05 OMO.#: OMO-RFD8P05 |
MOSFET TO-251AA P-Ch Power |
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Mfr.#: RFD8P03L OMO.#: OMO-RFD8P03L-1190 |
Neu und Original |
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Mfr.#: RFD8P05 OMO.#: OMO-RFD8P05-ON-SEMICONDUCTOR |
MOSFET P-CH 50V 8A I-PAK |
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Mfr.#: RFD8P05SM (TO-251) OMO.#: OMO-RFD8P05SM-TO-251--1190 |
Neu und Original |
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Mfr.#: RFD8P05SM9A OMO.#: OMO-RFD8P05SM9A-1190 |
Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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Mfr.#: RFD8P06 OMO.#: OMO-RFD8P06-1190 |
Neu und Original |
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Mfr.#: RFD8P06ESM9A OMO.#: OMO-RFD8P06ESM9A-1190 |
(Alt: RFD8P06ESM9A) |
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Mfr.#: RFD8P06LE OMO.#: OMO-RFD8P06LE-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
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Mfr.#: RFD8P06LESM OMO.#: OMO-RFD8P06LESM-1190 |
8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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Mfr.#: RFD8P06LESM9A OMO.#: OMO-RFD8P06LESM9A-1190 |
- Bulk (Alt: RFD8P06LESM9A) |