TC58NYG0S3HBAI6

TC58NYG0S3HBAI6
Mfr. #:
TC58NYG0S3HBAI6
Hersteller:
Toshiba Memory
Beschreibung:
EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TC58NYG0S3HBAI6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
TC58NYG0S3HBAI6 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Toshiba Halbleiter und Speicher
Produktkategorie
Erinnerung
Serie
-
Verpackung
Tablett
Paket-Koffer
67-VFBGA
Betriebstemperatur
-40°C ~ 85°C (TA)
Schnittstelle
Parallel
Spannungsversorgung
1.7 V ~ 1.95 V
Lieferanten-Geräte-Paket
67-VFBGA (6.5x8)
Speichergröße
1G (128M x 8)
Speichertyp
EEPROM - NAND
Geschwindigkeit
25ns
Format-Speicher
EEPROMs - Seriell
Tags
TC58NYG0, TC58NYG, TC58NY, TC58N, TC58, TC5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    V***v
    V***v
    RU

    Ok

    2019-08-08
    V***o
    V***o
    RU

    Can't answer

    2019-05-01
    F***a
    F***a
    CZ

    Perfect product. I recommend.

    2019-06-29
    A***n
    A***n
    NG

    Well packaged. Fast shipping.

    2019-08-23
***akorn
NAND Flash Serial 1.8V 1G-bit 128M x 8 67-Pin VFBGA
***i-Key
IC EEPROM 1GBIT 25NS 67VFBGA
***et
1Gbit, generation: 24nm, VCC=1.7 to 1.95V
***S
vpe: 253/tray/bga
SLC NAND and BENAND
Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory. 
Teil # Mfg. Beschreibung Aktie Preis
TC58NYG0S3HBAI6
DISTI # TC58NYG0S3HBAI6-ND
Toshiba Semiconductor and Storage ProductsIC FLASH 1G PARALLEL 67VFBGA
RoHS: Compliant
Min Qty: 338
Container: Tray
Temporarily Out of Stock
  • 338:$2.8107
TC58NYG0S3HBAI6
DISTI # TC58NYG0S3HBAI6
Toshiba America Electronic Components1Gbit, generation: 24nm, VCC=1.7 to 1.95V - Trays (Alt: TC58NYG0S3HBAI6)
RoHS: Compliant
Min Qty: 338
Container: Tray
Americas - 0
  • 338:$2.1900
  • 676:$2.1900
  • 1352:$2.0900
  • 2028:$2.0900
  • 3380:$2.0900
TC58NYG0S3HBAI6
DISTI # 757-TC58NYG0S3HBAI6
Toshiba America Electronic ComponentsNAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
RoHS: Compliant
338
  • 1:$3.0600
  • 10:$2.7500
  • 50:$2.7000
  • 100:$2.4100
  • 250:$2.3400
  • 500:$2.3300
  • 1000:$2.1700
  • 2500:$2.1300
Bild Teil # Beschreibung
TC58NYG1S3HBAI4

Mfr.#: TC58NYG1S3HBAI4

OMO.#: OMO-TC58NYG1S3HBAI4

NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM)
TC58NYG0S3EBAI4

Mfr.#: TC58NYG0S3EBAI4

OMO.#: OMO-TC58NYG0S3EBAI4

NAND Flash 1.8V 1Gb 43nm SLC NAND (EEPROM)
TC58NYG0S3EBAI4

Mfr.#: TC58NYG0S3EBAI4

OMO.#: OMO-TC58NYG0S3EBAI4-1151

SLC NAND Flash Serial 1.8V 1Gbit 128M x 8bit 63-Pin TFBGA - Trays (Alt: TC58NYG0S3EBAI4)
TC58NYG1S8EBAI4

Mfr.#: TC58NYG1S8EBAI4

OMO.#: OMO-TC58NYG1S8EBAI4-1190

Neu und Original
TC58NYG3S0FBAID

Mfr.#: TC58NYG3S0FBAID

OMO.#: OMO-TC58NYG3S0FBAID-1190

Neu und Original
TC58NYGOS3EBA14

Mfr.#: TC58NYGOS3EBA14

OMO.#: OMO-TC58NYGOS3EBA14-1190

Neu und Original
TC58NYG2S0HBAI6

Mfr.#: TC58NYG2S0HBAI6

OMO.#: OMO-TC58NYG2S0HBAI6-TOSHIBA-MEMORY-AMERICA

EEPROM 1.8V, 4 Gbit CMOS NAND EEPROM
TC58NYG0S3HBAI6

Mfr.#: TC58NYG0S3HBAI6

OMO.#: OMO-TC58NYG0S3HBAI6-TOSHIBA-MEMORY-AMERICA

EEPROM 1.8V, 1 Gbit CMOS NAND EEPROM
TC58NYG1S3HBAI4

Mfr.#: TC58NYG1S3HBAI4

OMO.#: OMO-TC58NYG1S3HBAI4-TOSHIBA-MEMORY-AMERICA

Flash Memory 2Gb 1.8V SLC NAND Flash Serial EEPROM
TC58NYG2S0HBAI4-ND

Mfr.#: TC58NYG2S0HBAI4-ND

OMO.#: OMO-TC58NYG2S0HBAI4-ND-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von TC58NYG0S3HBAI6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,24 $
2,24 $
10
2,12 $
21,23 $
100
2,01 $
201,15 $
500
1,90 $
949,90 $
1000
1,79 $
1 788,00 $
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