CGHV1F025S

CGHV1F025S
Mfr. #:
CGHV1F025S
Hersteller:
N/A
Beschreibung:
RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CGHV1F025S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CGHV1F025S Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Skyworks
Produktkategorie:
HF-JFET-Transistoren
RoHS:
Y
Transistortyp:
pHEMT
Technologie:
GaAs
Polarität des Transistors:
N-Kanal
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Montageart:
SMD/SMT
Paket / Koffer:
SC-70-4
Verpackung:
Spule
Marke:
Skyworks-Lösungen, Inc.
NF - Rauschzahl:
0.4 dB
P1dB - Kompressionspunkt:
10.5 dBm
Produktart:
HF-JFET-Transistoren
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Tags
CGHV1F, CGHV1, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 40V 12DFN
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
Teil # Mfg. Beschreibung Aktie Preis
CGHV1F025S-AMP1
DISTI # CGHV1F025S-AMP1-ND
WolfspeedDEMO HEMT TRANS AMP1 CGHV1F025S
RoHS: Compliant
Min Qty: 1
Container: Bulk
1In Stock
  • 1:$637.4400
CGHV1F025S
DISTI # CGHV1F025STR-ND
WolfspeedRF MOSFET HEMT 40V 12DFN
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 250:$87.4405
CGHV1F025S
DISTI # CGHV1F025SCT-ND
WolfspeedRF MOSFET HEMT 40V 12DFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 100:$96.1846
  • 1:$97.9300
CGHV1F025S
DISTI # CGHV1F025SDKR-ND
WolfspeedRF MOSFET HEMT 40V 12DFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 100:$96.1846
  • 1:$97.9300
CGHV1F025S
DISTI # 941-CGHV1F025S
Cree, Inc.RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt
RoHS: Compliant
0
  • 1:$87.4400
CGHV1F025S-AMP1
DISTI # 941-CGHV1F025S-AMP1
Cree, Inc.RF Development Tools Test Board with GaN HEMT
RoHS: Compliant
1
  • 1:$637.4400
Bild Teil # Beschreibung
CG2H40010F

Mfr.#: CG2H40010F

OMO.#: OMO-CG2H40010F

RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt
CG2H40025F

Mfr.#: CG2H40025F

OMO.#: OMO-CG2H40025F

RF JFET Transistors GaN HEMT DC-6.0GHz, 25 Watt
CGHV1F006S

Mfr.#: CGHV1F006S

OMO.#: OMO-CGHV1F006S

RF JFET Transistors GaN HEMT DC-18GHz, 6 Watt
CGHV40030F

Mfr.#: CGHV40030F

OMO.#: OMO-CGHV40030F

RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt
CG2H40010F

Mfr.#: CG2H40010F

OMO.#: OMO-CG2H40010F-WOLFSPEED

RF MOSFET HEMT 28V 440166
CG2H40025F

Mfr.#: CG2H40025F

OMO.#: OMO-CG2H40025F-WOLFSPEED

RF MOSFET HEMT 28V 440166
CGHV1F006S

Mfr.#: CGHV1F006S

OMO.#: OMO-CGHV1F006S-WOLFSPEED

RF MOSFET HEMT 40V 12DFN
CGHV40030F

Mfr.#: CGHV40030F

OMO.#: OMO-CGHV40030F-WOLFSPEED

RF MOSFET HEMT 50V 440166
Verfügbarkeit
Aktie:
248
Auf Bestellung:
2231
Menge eingeben:
Der aktuelle Preis von CGHV1F025S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
83,30 $
83,30 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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