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CSD25201W15

CSD25201W15
Mfr. #:
CSD25201W15
Beschreibung:
IGBT Transistors MOSFET P-Channel NexFET Pwr MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD25201W15 Datenblatt
Die Zustellung:
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Mehr Informationen:
CSD25201W15 Mehr Informationen CSD25201W15 Product Details
Produkteigenschaft
Attributwert
Hersteller
TI
Produktkategorie
FETs - Einzeln
Serie
CSD25201W15
Verpackung
Spule
Montageart
SMD/SMT
Handelsname
NexFET
Paket-Koffer
DSBGA-9
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 P-Channel
Pd-Verlustleistung
1.5 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
38 ns
Anstiegszeit
11 ns
Vgs-Gate-Source-Spannung
- 6 V
ID-Dauer-Drain-Strom
4 A
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Rds-On-Drain-Source-Widerstand
33 mOhms
Transistor-Polarität
P-Kanal
Typische-Ausschaltverzögerungszeit
51 ns
Typische-Einschaltverzögerungszeit
9.5 ns
Qg-Gate-Ladung
4.3 nC
Vorwärts-Transkonduktanz-Min
12 S
Tags
CSD2520, CSD252, CSD25, CSD2, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
P-Channel NexFET™ Power MOSFET 9-DSBGA -55 to 150
***nell
MOSFET, P CH, 20V, 4A, 9DSBGA; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:DSBGA; No. of Pins:9; SVHC:No SVHC (19-Dec-2011)
***th Star Micro
the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Teil # Beschreibung Aktie Preis
CSD25201W15
DISTI # 296-27609-2-ND		MOSFET P-CH 20V 4A 9DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    CSD25201W15
    DISTI # 296-27609-1-ND    		MOSFET P-CH 20V 4A 9DSBGA
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      CSD25201W15
      DISTI # 296-27609-6-ND      		MOSFET P-CH 20V 4A 9DSBGA
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        CSD25201W15
        DISTI # CSD25201W15        		Trans MOSFET P-CH 20V 4A 9-Pin Wafer T/R (Alt: CSD25201W15)
        RoHS: Not Compliant
        Min Qty: 893        		Americas - 0
        • 893:$0.4059
        • 895:$0.3859
        • 1788:$0.3729
        • 4465:$0.3609
        • 8930:$0.3509
        CSD25201W15
        DISTI # 595-CSD25201W15        		MOSFET P-Channel NexFET Pwr MOSFET
        RoHS: Compliant        		2778
        • 1:$0.9600
        • 10:$0.7760
        • 100:$0.5960
        • 500:$0.4600
        • 1000:$0.4150
        • 3000:$0.3680
        • 9000:$0.3550
        CSD25201W15Power Field-Effect Transistor, 4A I(D), 20V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		1086
        • 1000:$0.3700
        • 500:$0.3900
        • 100:$0.4000
        • 25:$0.4200
        • 1:$0.4500
        CSD25201W15
        DISTI # 1892458        		MOSFET, P CH, 20V, 4A, 9DSBGA
        RoHS: Compliant        		2293
        • 5:£0.4280
        • 25:£0.4270
        • 100:£0.4250
        • 250:£0.4230
        • 500:£0.3480
        Bild Teil # Beschreibung
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        CSD25485F5T

        Mfr.#: CSD25485F5T

        OMO.#: OMO-CSD25485F5T

        		 MOSFET -20V, P ch NexFET MOSFETG , single LGA 0.8x1.5, 42mOhm 3-PICOSTAR -55 to 150
        CSD25303W1015

        Mfr.#: CSD25303W1015

        OMO.#: OMO-CSD25303W1015-TEXAS-INSTRUMENTS

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        CSD25202W15

        Mfr.#: CSD25202W15

        OMO.#: OMO-CSD25202W15-TEXAS-INSTRUMENTS

        		 Trans MOSFET P-CH 20V 4A 9-Pin DSBGA T/R
        CSD25213W10

        Mfr.#: CSD25213W10

        OMO.#: OMO-CSD25213W10-TEXAS-INSTRUMENTS

        		 MOSFET P-CH 20V 1.6A 4DSBGA
        CSD25402Q3A

        Mfr.#: CSD25402Q3A

        OMO.#: OMO-CSD25402Q3A-TEXAS-INSTRUMENTS

        		 Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R
        CSD25481F4

        Mfr.#: CSD25481F4

        OMO.#: OMO-CSD25481F4-TEXAS-INSTRUMENTS

        		 MOSFET P-CH 20V 2.5A 3PICOSTAR
        CSD25485F5

        Mfr.#: CSD25485F5

        OMO.#: OMO-CSD25485F5-TEXAS-INSTRUMENTS

        		 Trans MOSFET P-CH 20V 5.3A 3-Pin PICOSTAR T/R
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4000
        Menge eingeben:
        Der aktuelle Preis von CSD25201W15 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,53 $
        0,53 $
        10
        0,50 $
        5,00 $
        100
        0,47 $
        47,37 $
        500
        0,45 $
        223,70 $
        1000
        0,42 $
        421,10 $
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