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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFD8P03LSM | Harris Semiconductor | RoHS: Not Compliant | 300 |
|
| RFD8P03LSM96 | Harris Semiconductor | RoHS: Not Compliant | 1800 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RFD8P05SM OMO.#: OMO-RFD8P05SM |
MOSFET TO-252AA P-Ch Power |
|
Mfr.#: RFD8P03 OMO.#: OMO-RFD8P03-1190 |
Neu und Original |
|
|
Mfr.#: RFD8P03L OMO.#: OMO-RFD8P03L-1190 |
Neu und Original |
|
Mfr.#: RFD8P05SM |
MOSFET P-CH 50V 8A TO-252AA |
|
|
Mfr.#: RFD8P05SM9A OMO.#: OMO-RFD8P05SM9A-1190 |
Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: RFD8P06E OMO.#: OMO-RFD8P06E-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: RFD8P06LE OMO.#: OMO-RFD8P06LE-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: RFD8P06LESM OMO.#: OMO-RFD8P06LESM-1190 |
8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
|
|
Mfr.#: RFD8P06LESM9A OMO.#: OMO-RFD8P06LESM9A-1190 |
- Bulk (Alt: RFD8P06LESM9A) |
|
|
Mfr.#: RFD8P06SM OMO.#: OMO-RFD8P06SM-1190 |
Neu und Original |
