OMO ElectronicOMO Electronic
Expand menu
0 Wagen

IPD65R420CFD

IPD65R420CFD
Mfr. #:
IPD65R420CFD
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD65R420CFD Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPD65R420CFD Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
8.7 A
Rds On - Drain-Source-Widerstand:
420 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
32 nC
Pd - Verlustleistung:
83.3 W
Aufbau:
Single
Handelsname:
CoolMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Serie:
CoolMOS CFD2
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
IPD65R420CFDBTMA1 IPD65R42CFDXT SP000891704
Gewichtseinheit:
0.139332 oz
Tags
IPD65R42, IPD65R4, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPD65R420CFDBTMA1
DISTI # IPD65R420CFDBTMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IPD65R420CFDBTMA1
    DISTI # IPD65R420CFDBTMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IPD65R420CFDBTMA1
      DISTI # IPD65R420CFDBTMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.8756
      IPD65R420CFDBTMA1
      DISTI # SP000891704      		Infineon Technologies AGTrans MOSFET N-CH 650V 8.7A 3-Pin(2+Tab) TO-252 (Alt: SP000891704)
      RoHS: Compliant
      Min Qty: 2500      		Europe - 2500
      • 2500:€1.3259
      • 5000:€1.1129
      • 10000:€0.9289
      • 15000:€0.8099
      • 25000:€0.7579
      IPD65R420CFDBTMA1Infineon Technologies AGPower Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant      		46976
      • 1000:$0.7600
      • 500:$0.8000
      • 100:$0.8400
      • 25:$0.8700
      • 1:$0.9400
      IPD65R420CFD
      DISTI # 726-IPD65R420CFD      		Infineon Technologies AGMOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
      RoHS: Compliant      		0
      • 1:$1.7400
      • 10:$1.4800
      • 100:$1.1800
      • 500:$1.0400
      • 1000:$0.8550
      IPD65R420CFDBTMA1
      DISTI # N/A      		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
        Bild Teil # Beschreibung
        IPD65R1K4CFD

        Mfr.#: IPD65R1K4CFD

        OMO.#: OMO-IPD65R1K4CFD

        		 MOSFET N-Ch 700V 8.2A DPAK-2
        IPD65R660CFDA

        Mfr.#: IPD65R660CFDA

        OMO.#: OMO-IPD65R660CFDA

        		 MOSFET N-Ch 650V 6A DPAK-2
        IPD65R950CFD

        Mfr.#: IPD65R950CFD

        OMO.#: OMO-IPD65R950CFD

        		 MOSFET N-Ch 700V 3.9A DPAK-2
        IPD65R600C6BTMA1

        Mfr.#: IPD65R600C6BTMA1

        OMO.#: OMO-IPD65R600C6BTMA1

        		 MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6
        IPD65R600E6BTMA1

        Mfr.#: IPD65R600E6BTMA1

        OMO.#: OMO-IPD65R600E6BTMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 650V 7.3A TO252-3
        IPD65R1K0CEAUMA1

        Mfr.#: IPD65R1K0CEAUMA1

        OMO.#: OMO-IPD65R1K0CEAUMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 650V TO-252
        IPD65R1K4CFD

        Mfr.#: IPD65R1K4CFD

        OMO.#: OMO-IPD65R1K4CFD-1190

        		 MOSFET N-Ch 700V 8.2A DPAK-2
        IPD65R225C7

        Mfr.#: IPD65R225C7

        OMO.#: OMO-IPD65R225C7-1190

        		 MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7
        IPD65R225C7ATMA1

        Mfr.#: IPD65R225C7ATMA1

        OMO.#: OMO-IPD65R225C7ATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 650V 11A TO252-3
        IPD65R250C6S

        Mfr.#: IPD65R250C6S

        OMO.#: OMO-IPD65R250C6S-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von IPD65R420CFD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,73 $
        1,73 $
        10
        1,47 $
        14,70 $
        100
        1,17 $
        117,00 $
        500
        1,03 $
        515,00 $
        1000
        0,85 $
        854,00 $
        Beginnen mit
        Neueste Produkte
        More Newest Products
        Top