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IPD60R600P6ATMA1

IPD60R600P6ATMA1
Mfr. #:
IPD60R600P6ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 600V 7.3A TO252
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPD60R600P6ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPD60R600P6ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IPD60R600P, IPD60R60, IPD60R6, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 10.60 Ohm 12 nC CoolMOS™ Power Mosfet - DPAK
***ical
Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) TO-252
***et Europe
Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R
***Components
MOSFET N-Channel 600V 7.3A CoolMOS TO252
***ark
MOSFET, N-CH, 600V, 7.3A, TO-252-3
*** Source Electronics
MOSFET N-CH 600V 7.3A TO252
***ronik
N-CH 650V 18A 600mOhm TO252
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 7.3A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:63W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 600V, 7.3A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:7.3A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.54ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:63W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Infineon SMPS - Low Power Topology
Infineon Technologies SMPS Low Power Topology is used for low  power applications from 100W down to under 1W, wherethe output needs to be isolated from the input. Its best initialattraction is the low system cost, simplicity and ease ofimplementation. The DCM (Discontinuous Conduction Mode) Fly Back topology is the popular operating mode for low current output and power levels below 50W. The low power QR (Quasi-Resonant) Fly Back topology is largely used in low power SMPS applications such as charger, adapter and auxiliary supply.Learn More
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPD60R600P6ATMA1
DISTI # V72:2272_06384618		Infineon Technologies AGTrans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		1174
  • 1000:$0.5778
  • 500:$0.7381
  • 250:$0.9009
  • 100:$0.9102
  • 25:$1.1753
  • 10:$1.1871
  • 1:$1.4769
IPD60R600P6ATMA1
DISTI # V36:1790_06384618		Infineon Technologies AGTrans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
    IPD60R600P6ATMA1
    DISTI # IPD60R600P6ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 7.3A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1052In Stock
    • 1000:$0.6163
    • 500:$0.7806
    • 100:$0.9450
    • 10:$1.2120
    • 1:$1.3600
    IPD60R600P6ATMA1
    DISTI # IPD60R600P6ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 600V 7.3A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1052In Stock
    • 1000:$0.6163
    • 500:$0.7806
    • 100:$0.9450
    • 10:$1.2120
    • 1:$1.3600
    IPD60R600P6ATMA1
    DISTI # IPD60R600P6ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 600V 7.3A TO252
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 12500:$0.5106
    • 5000:$0.5305
    • 2500:$0.5585
    IPD60R600P6ATMA1
    DISTI # 22620556    		Infineon Technologies AGTrans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		2500
    • 2500:$0.4758
    IPD60R600P6ATMA1
    DISTI # 27179197    		Infineon Technologies AGTrans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		1174
    • 1000:$0.5778
    • 500:$0.7381
    • 250:$0.9009
    • 100:$0.9102
    • 25:$1.1753
    • 14:$1.1871
    IPD60R600P6ATMA1
    DISTI # IPD60R600P6ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 650V 7.3A 3-Pin DPAK T/R - Tape and Reel (Alt: IPD60R600P6ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.4819
    • 15000:$0.4909
    • 10000:$0.5079
    • 5000:$0.5269
    • 2500:$0.5469
    IPD60R600P6ATMA1
    DISTI # SP001178242    		Infineon Technologies AGTrans MOSFET N-CH 650V 7.3A 3-Pin DPAK T/R (Alt: SP001178242)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€0.4509
    • 15000:€0.4859
    • 10000:€0.5269
    • 5000:€0.5749
    • 2500:€0.7019
    IPD60R600P6ATMA1
    DISTI # 726-IPD60R600P6ATMA1    		Infineon Technologies AGMOSFET LOW POWER_LEGACY
    RoHS: Compliant    		0
    • 1:$1.2400
    • 10:$1.0600
    • 100:$0.8170
    • 500:$0.7220
    • 1000:$0.5700
    Bild Teil # Beschreibung
    IPD60R600E6ATMA1

    Mfr.#: IPD60R600E6ATMA1

    OMO.#: OMO-IPD60R600E6ATMA1

    		 MOSFET
    IPD60R600P7SAUMA1

    Mfr.#: IPD60R600P7SAUMA1

    OMO.#: OMO-IPD60R600P7SAUMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 600V 6A TO252-3
    IPD60R600P7ATMA1-CUT TAPE

    Mfr.#: IPD60R600P7ATMA1-CUT TAPE

    OMO.#: OMO-IPD60R600P7ATMA1-CUT-TAPE-1190

    		 Neu und Original
    IPD60R600P7SE8228AUMA1

    Mfr.#: IPD60R600P7SE8228AUMA1

    OMO.#: OMO-IPD60R600P7SE8228AUMA1-INFINEON-TECHNOLOGIES

    		 Transistor MOSFET N-CH 650V 6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R600P7SE8228AUMA1)
    IPD60R600C6

    Mfr.#: IPD60R600C6

    OMO.#: OMO-IPD60R600C6-1190

    		 Trans MOSFET N-CH 600V 7.3A 3-Pin TO-252 T/R (Alt: IPD60R600C6)
    IPD60R600C6 (6R600C6)

    Mfr.#: IPD60R600C6 (6R600C6)

    OMO.#: OMO-IPD60R600C6-6R600C6--1190

    		 Neu und Original
    IPD60R600CPATMA1

    Mfr.#: IPD60R600CPATMA1

    OMO.#: OMO-IPD60R600CPATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 600V 6.1A TO-252
    IPD60R600CPBTMA1

    Mfr.#: IPD60R600CPBTMA1

    OMO.#: OMO-IPD60R600CPBTMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 600V 6.1A TO-252
    IPD60R600E6

    Mfr.#: IPD60R600E6

    OMO.#: OMO-IPD60R600E6-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 600V 7.3A TO252
    IPD60R600P6

    Mfr.#: IPD60R600P6

    OMO.#: OMO-IPD60R600P6-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 600V 7.3A TO252
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von IPD60R600P6ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,72 $
    0,72 $
    10
    0,69 $
    6,87 $
    100
    0,65 $
    65,06 $
    500
    0,61 $
    307,20 $
    1000
    0,58 $
    578,30 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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