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MSC025SMA120J

MSC025SMA120J
Mfr. #:
MSC025SMA120J
Hersteller:
Microchip / Microsemi
Beschreibung:
MOSFET UNRLS, FG, SIC MOSFET, SOT-227
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MSC025SMA120J Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MSC025SMA120J Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Chassishalterung
Paket / Koffer:
SOT-227-4
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1.2 kV
Rds On - Drain-Source-Widerstand:
31 mOhms
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Marke:
Mikrochip / Mikrosemi
Produktart:
MOSFET
Werkspackungsmenge:
1
Unterkategorie:
MOSFETs
Tags
MSC025, MSC02, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
Teil # Mfg. Beschreibung Aktie Preis
MSC025SMA120J
DISTI # V36:1790_21671870		Microsemi CorporationMSC025SMA120J0
  • 10000:$55.2100
  • 5000:$55.2200
  • 1000:$57.9500
  • 100:$64.8000
  • 10:$66.0800
MSC025SMA120J
DISTI # 691-MSC025SMA120J-ND		Microsemi CorporationGEN2 SIC MOSFET 1200V 25MOHM SOT
Min Qty: 1
Container: Tube		20In Stock
  • 100:$56.5807
  • 25:$61.1236
  • 10:$62.7760
  • 1:$66.0800
MSC025SMA120J
DISTI # MSC025SMA120J		Microchip Technology IncSilicon Carbide Power MOSFET N-Channel 1200V 77A SOT-227 - Rail/Tube (Alt: MSC025SMA120J)
RoHS: Compliant
Min Qty: 10
Container: Tube		Americas - 0
  • 100:$51.2900
  • 50:$52.0900
  • 30:$53.7900
  • 20:$55.5900
  • 10:$57.4900
MSC025SMA120J
DISTI # 494-MSC025SMA120J		Microchip Technology IncMOSFET UNRLS, FG, SIC MOSFET, SOT-227
RoHS: Compliant		21
  • 1:$86.0800
  • 2:$83.4900
  • 5:$82.4700
  • 10:$80.8700
  • 25:$78.2500
  • 50:$76.5200
  • 100:$72.4600
MSC025SMA120J
DISTI # MSC025SMA120J		Microsemi CorporationSILICON CARBIDE MOSFETS
RoHS: Compliant		250
  • 1:$63.0500
  • 10:$54.1600
  • 50:$52.7900
  • 100:$52.1300
Bild Teil # Beschreibung
NTHL080N120SC1

Mfr.#: NTHL080N120SC1

OMO.#: OMO-NTHL080N120SC1

 MOSFET SIC MOS 80MW 1200V
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120

 MOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
SCT10N120

Mfr.#: SCT10N120

OMO.#: OMO-SCT10N120-STMICROELECTRONICS

 MOSFET N-CH 1.2KV TO247-3
NTHL080N120SC1

Mfr.#: NTHL080N120SC1

OMO.#: OMO-NTHL080N120SC1-ON-SEMICONDUCTOR

 SIC MOS TO247 80MW 1200V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von MSC025SMA120J dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
86,08 $
86,08 $
2
83,49 $
166,98 $
5
82,47 $
412,35 $
10
80,87 $
808,70 $
25
78,25 $
1 956,25 $
50
76,52 $
3 826,00 $
100
72,46 $
7 246,00 $
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