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IPB120N06S4H1ATMA2

IPB120N06S4H1ATMA2
Mfr. #:
IPB120N06S4H1ATMA2
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB120N06S4H1ATMA2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IPB120N06
Verpackung
Spule
Teil-Aliasnamen
IPB120N06S4-H1 IPB120N06S4H1XT SP001028782
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-263-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
250 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
15 ns
Anstiegszeit
5 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
120 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Widerstand
2.4 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
60 ns
Typische-Einschaltverzögerungszeit
30 ns
Qg-Gate-Ladung
270 nC
Kanal-Modus
Erweiterung
Tags
IPB120N06S, IPB120N06, IPB120N0, IPB120N, IPB120, IPB12, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 175DEG C, 250W;
***ure Electronics
Single N-Channel 60 V 2.1 mOhm 270 nC OptiMOS™ Power Mosfet - TO-263-3
***et
Transistor MOSFET N-CH 60V 120A 3-Pin TO-263 T/R
***ark
MOSFET, N-CH, 60V, 175DEG C, 250W ROHS COMPLIANT: YES
***nell
MOSFET, CAN-N, 60V, 175°C, 250W;
***i-Key
MOSFET N-CH 60V 120A TO263-3
***ronik
N-CH 60V 120A 2,1mOhm TO263
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Teil # Mfg. Beschreibung Aktie Preis
IPB120N06S4H1ATMA2
DISTI # IPB120N06S4H1ATMA2-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.5807
IPB120N06S4H1ATMA2
DISTI # IPB120N06S4H1ATMA2		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N06S4H1ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.3900
  • 2000:$1.3900
  • 4000:$1.2900
  • 6000:$1.2900
  • 10000:$1.2900
IPB120N06S4H1ATMA2
DISTI # SP001028782		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP001028782)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.5900
  • 2000:€1.2900
  • 4000:€1.1900
  • 6000:€1.0900
  • 10000:€1.0900
IPB120N06S4H1ATMA2
DISTI # 726-IPB120N06S4H1ATM		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2
RoHS: Compliant		2017
  • 1:$2.7200
  • 10:$2.3100
  • 100:$2.0100
  • 250:$1.9000
  • 500:$1.7100
  • 1000:$1.4400
IPB120N06S4-H1
DISTI # 726-IP726-B120N06S4H		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
RoHS: Compliant		0
    Bild Teil # Beschreibung
    IPB120N06S4H1ATMA2

    Mfr.#: IPB120N06S4H1ATMA2

    OMO.#: OMO-IPB120N06S4H1ATMA2

    		 MOSFET N-Ch 60V 120A D2PAK-2
    IPB120N06S403ATMA1

    Mfr.#: IPB120N06S403ATMA1

    OMO.#: OMO-IPB120N06S403ATMA1

    		 MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
    IPB120N06N G

    Mfr.#: IPB120N06N G

    OMO.#: OMO-IPB120N06N-G

    		 MOSFET N-Ch 60V 75A D2PAK-2
    IPB120N06S402ATMA1

    Mfr.#: IPB120N06S402ATMA1

    OMO.#: OMO-IPB120N06S402ATMA1

    		 MOSFET N-CHANNEL_55/60V
    IPB120N06N G

    Mfr.#: IPB120N06N G

    OMO.#: OMO-IPB120N06N-G-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 75A TO-263
    IPB120N06NGINTR-ND

    Mfr.#: IPB120N06NGINTR-ND

    OMO.#: OMO-IPB120N06NGINTR-ND-1190

    		 Neu und Original
    IPB120N06S4-H1

    Mfr.#: IPB120N06S4-H1

    OMO.#: OMO-IPB120N06S4-H1-1190

    		 Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: IPB120N06S4-H1)
    IPB120N06S402ATMA1

    Mfr.#: IPB120N06S402ATMA1

    OMO.#: OMO-IPB120N06S402ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 120A TO263-3
    IPB120N06S4H1ATMA2

    Mfr.#: IPB120N06S4H1ATMA2

    OMO.#: OMO-IPB120N06S4H1ATMA2-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2
    IPB120N06S4-03

    Mfr.#: IPB120N06S4-03

    OMO.#: OMO-IPB120N06S4-03-317

    		 RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von IPB120N06S4H1ATMA2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,86 $
    1,86 $
    10
    1,77 $
    17,65 $
    100
    1,67 $
    167,22 $
    500
    1,58 $
    789,65 $
    1000
    1,49 $
    1 486,40 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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