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SIHP22N60E-E3

SIHP22N60E-E3
Mfr. #:
SIHP22N60E-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHP22N60E-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP22N60E-E3 DatasheetSIHP22N60E-E3 Datasheet (P4-P6)SIHP22N60E-E3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIHP22N60E-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220AB-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
21 A
Rds On - Drain-Source-Widerstand:
180 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
57 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
227 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
E
Marke:
Vishay / Siliconix
Abfallzeit:
35 ns
Produktart:
MOSFET
Anstiegszeit:
27 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
66 ns
Typische Einschaltverzögerungszeit:
18 ns
Gewichtseinheit:
0.211644 oz
Tags
SIHP22N60E-E, SIHP22N60E, SIHP22N60, SIHP22, SIHP2, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 600V, 21A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra
***ure Electronics
E-Series N-Channel 600 V 0.18 O 86 nC Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220AB
***nell
MOSFET, N CH, 600V, 21A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:227W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHP22N60E-E3
DISTI # V99:2348_09218739		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant		782
  • 250:$2.5910
  • 100:$2.7599
  • 10:$3.3410
  • 1:$4.3989
SIHP22N60E-E3
DISTI # SIHP22N60E-E3-ND		Vishay SiliconixMOSFET N-CH 600V 21A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		Temporarily Out of Stock
  • 5000:$1.9488
  • 3000:$2.0249
  • 1000:$2.1315
  • 100:$2.9689
  • 25:$3.4256
  • 10:$3.6240
  • 1:$4.0300
SIHP22N60E-E3
DISTI # 25872706		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant		782
  • 4:$4.3989
SIHP22N60E-E3
DISTI # SIHP22N60E-E3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SIHP22N60E-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$1.7900
  • 4000:$1.8900
  • 6000:$1.8900
  • 2000:$1.9900
  • 1000:$2.0900
SIHP22N60E-E3
DISTI # 781-SIHP22N60E-E3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant		2439
  • 1:$4.0600
  • 10:$3.3600
  • 100:$2.7600
  • 250:$2.6800
  • 500:$2.4000
  • 1000:$2.0200
  • 2500:$1.9200
SIHP22N60E-GE3
DISTI # 78-SIHP22N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant		900
  • 1:$4.0600
  • 10:$3.3600
  • 100:$2.7600
  • 250:$2.6800
  • 500:$2.4000
  • 1000:$2.0200
  • 2500:$1.9200
SIHP22N60EE3Vishay IntertechnologiesPower Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		334
    SIHP22N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
    RoHS: Compliant    		Americas -
      SIHP22N60E-E3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
      RoHS: Compliant      		Americas -
        Bild Teil # Beschreibung
        SIHP22N60AE-GE3

        Mfr.#: SIHP22N60AE-GE3

        OMO.#: OMO-SIHP22N60AE-GE3

        		 MOSFET 600V Vds 30V Vgs TO-220AB
        SIHP22N60E-GE3

        Mfr.#: SIHP22N60E-GE3

        OMO.#: OMO-SIHP22N60E-GE3

        		 MOSFET 600V Vds 30V Vgs TO-220AB
        SIHP22N65E-GE3

        Mfr.#: SIHP22N65E-GE3

        OMO.#: OMO-SIHP22N65E-GE3

        		 MOSFET 650V Vds 30V Vgs TO-220AB
        SIHP22N60EL-GE3

        Mfr.#: SIHP22N60EL-GE3

        OMO.#: OMO-SIHP22N60EL-GE3

        		 MOSFET 600V Vds 30V Vgs TO-220AB
        SIHP22N60E-E3

        Mfr.#: SIHP22N60E-E3

        OMO.#: OMO-SIHP22N60E-E3-VISHAY

        		 MOSFET N-CH 600V 21A TO220AB
        SIHP22N60E-E3,SIHP22N60S

        Mfr.#: SIHP22N60E-E3,SIHP22N60S

        OMO.#: OMO-SIHP22N60E-E3-SIHP22N60S-1190

        		 Neu und Original
        SIHP22N60EE3

        Mfr.#: SIHP22N60EE3

        OMO.#: OMO-SIHP22N60EE3-1190

        		 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        SIHP22N60EGE3

        Mfr.#: SIHP22N60EGE3

        OMO.#: OMO-SIHP22N60EGE3-1190

        		 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        SIHP22N60S

        Mfr.#: SIHP22N60S

        OMO.#: OMO-SIHP22N60S-1190

        		 Neu und Original
        SIHP22N60AE-GE3

        Mfr.#: SIHP22N60AE-GE3

        OMO.#: OMO-SIHP22N60AE-GE3-VISHAY

        		 MOSFET N-CH 600V 20A TO220AB
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1985
        Menge eingeben:
        Der aktuelle Preis von SIHP22N60E-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        4,06 $
        4,06 $
        10
        3,36 $
        33,60 $
        100
        2,76 $
        276,00 $
        250
        2,68 $
        670,00 $
        500
        2,40 $
        1 200,00 $
        1000
        2,02 $
        2 020,00 $
        2500
        1,92 $
        4 800,00 $
        5000
        1,85 $
        9 250,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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