OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IXFN32N100Q3

IXFN32N100Q3
Mfr. #:
IXFN32N100Q3
Hersteller:
Littelfuse
Beschreibung:
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN32N100Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN32N100Q3 DatasheetIXFN32N100Q3 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFN32N100Q3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Chassishalterung
Paket / Koffer:
SOT-227-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1 kV
Id - Kontinuierlicher Drainstrom:
28 A
Rds On - Drain-Source-Widerstand:
320 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
195 nC
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
780 W
Aufbau:
Single
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFN32N1003
Transistortyp:
1 N-Channel
Marke:
IXYS
Produktart:
MOSFET
Anstiegszeit:
300 ns
Werkspackungsmenge:
10
Unterkategorie:
MOSFETs
Gewichtseinheit:
1.058219 oz
Tags
IXFN32N1, IXFN32N, IXFN32, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFN32N100Q3
DISTI # IXFN32N100Q3-ND		IXYS CorporationMOSFET N-CH 1000V 28A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube		10In Stock
  • 100:$36.9000
  • 30:$39.3600
  • 10:$42.5580
  • 1:$45.5100
IXFN32N100Q3
DISTI # 747-IXFN32N100Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
RoHS: Compliant		0
  • 1:$45.5100
  • 5:$43.9100
  • 10:$42.5600
  • 25:$39.3600
  • 50:$38.1900
  • 100:$36.9000
  • 200:$34.4400
Bild Teil # Beschreibung
IXFN32N120P

Mfr.#: IXFN32N120P

OMO.#: OMO-IXFN32N120P

 MOSFET 32 Amps 1200V
IXFN32N80P

Mfr.#: IXFN32N80P

OMO.#: OMO-IXFN32N80P

 MOSFET 29 Amps 800V 0.27 Rds
IXFN32N100P

Mfr.#: IXFN32N100P

OMO.#: OMO-IXFN32N100P

 MOSFET 32 Amps 1000V 0.32 Rds
IXFN320N17T2

Mfr.#: IXFN320N17T2

OMO.#: OMO-IXFN320N17T2

 MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXFN32N100Q3

Mfr.#: IXFN32N100Q3

OMO.#: OMO-IXFN32N100Q3

 MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
IXFN32N60

Mfr.#: IXFN32N60

OMO.#: OMO-IXFN32N60

 MOSFET 32 Amps 600V
IXFN32N120

Mfr.#: IXFN32N120

OMO.#: OMO-IXFN32N120-1190

 Trans MOSFET N-CH Si 1.2KV 32A 4-Pin SOT-227B
IXFN32N100P

Mfr.#: IXFN32N100P

OMO.#: OMO-IXFN32N100P-IXYS-CORPORATION

 MOSFET N-CH 1000V 27A SOT-227B
IXFN32N60

Mfr.#: IXFN32N60

OMO.#: OMO-IXFN32N60-IXYS-CORPORATION

 MOSFET 32 Amps 600V
IXFN32N100Q3

Mfr.#: IXFN32N100Q3

OMO.#: OMO-IXFN32N100Q3-IXYS-CORPORATION

 IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von IXFN32N100Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
45,51 $
45,51 $
5
43,91 $
219,55 $
10
42,56 $
425,60 $
25
39,36 $
984,00 $
50
38,19 $
1 909,50 $
100
36,90 $
3 690,00 $
200
34,44 $
6 888,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top