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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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IPB039N10N3GE8187ATMA1 DISTI # V36:1790_06377394 | Infineon Technologies AG | N-KANAL POWER MOS | 0 | |
IPB039N10N3GATMA1 DISTI # V36:1790_06377391 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant | 0 | |
IPB039N10N3GATMA1 DISTI # V72:2272_06377391 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant | 0 | |
IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | On Order |
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IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
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IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
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IPB039N10N3GE8187ATMA1 DISTI # IPB039N10N3GE8187ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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IPB039N10N3 G DISTI # IPB039N10N3 G | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R (Alt: IPB039N10N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Asia - 0 | |
IPB039N10N3 G DISTI # IPB039N10N3G | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R - Bulk (Alt: IPB039N10N3G) RoHS: Compliant Min Qty: 278 Container: Bulk | Americas - 0 |
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IPB039N10N3 G DISTI # SP000482428 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R (Alt: SP000482428) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
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IPB039N10N3GXT DISTI # IPB039N10N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
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IPB039N10N3GE8197ATMA1 DISTI # IPB039N10N3GE8197ATMA1 | Infineon Technologies AG | - Bulk (Alt: IPB039N10N3GE8197ATMA1) Min Qty: 253 Container: Bulk | Americas - 0 |
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IPB039N10N3GE8187ATMA1 DISTI # IPB039N10N3GE8187ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GE8187ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 | |
IPB039N10N3GATMA1 DISTI # 47W3465 | Infineon Technologies AG | MOSFET, N CHANNEL, 100V, 160A, TO263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:160A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes | 0 |
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IPB039N10N3 G DISTI # 726-IPB039N10N3G | Infineon Technologies AG | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 RoHS: Compliant | 112 |
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IPB039N10N3GATMA1 DISTI # 726-IPB039N10N3GATMA | Infineon Technologies AG | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 RoHS: Compliant | 0 |
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IPB039N10N3GE8187ATMA1 DISTI # 726-IPB039N10N3GE818 | Infineon Technologies AG | MOSFET MV POWER MOS RoHS: Compliant | 0 |
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IPB039N10N3G | Infineon Technologies AG | Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA RoHS: Compliant | 4 |
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IPB039N10N3GE8197ATMA1 | Infineon Technologies AG | RoHS: Not Compliant | 3 |
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IPB039N10N3G | Infineon Technologies AG | 243 | ||
IPB039N10N3G | Infineon Technologies AG | *** FREE SHIPPING ORDERS OVER $100 *** 160 A, 100 V, 0.0039 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263AA | 16 |
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IPB039N10N3 G | 129 | |||
IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,100V,160A,214W,PG-TO263-7 | 58 |
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IPB039N10N3GATMA1 DISTI # 2212838 | Infineon Technologies AG | MOSFET, N-CH, 100V, 160A, TO263-7 RoHS: Compliant | 0 |
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IPB039N10N3GATMA1 DISTI # 2212838 | Infineon Technologies AG | MOSFET, N-CH, 100V, 160A, TO263-7 | 0 |
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IPB039N10N3G | Infineon Technologies AG | 100V,160A,N Channel Power MOSFET | 39 |
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IPB039N10N3 G | Infineon Technologies AG | RoHS(ship within 1day) | 20 |
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Bild | Teil # | Beschreibung |
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Mfr.#: IPB039N10N3 G OMO.#: OMO-IPB039N10N3-G |
MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | |
Mfr.#: IPB039N10N3GATMA1 OMO.#: OMO-IPB039N10N3GATMA1 |
MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | |
Mfr.#: IPB039N10N3GE8187ATMA1 OMO.#: OMO-IPB039N10N3GE8187ATMA1 |
MOSFET MV POWER MOS | |
Mfr.#: IPB039N10N3GE8187ATMA1 |
MOSFET N-CH 100V 160A TO263-7 | |
Mfr.#: IPB039N10N3GATMA1 |
MOSFET N-CH 100V 160A TO263-7 | |
Mfr.#: IPB039N04LGATMA1 |
MOSFET N-CH 40V 80A TO263-3 | |
Mfr.#: IPB039N10N3G OMO.#: OMO-IPB039N10N3G-1190 |
Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA | |
Mfr.#: IPB039N10N3GATMA OMO.#: OMO-IPB039N10N3GATMA-1190 |
Neu und Original | |
Mfr.#: IPB039N10N3GATMA1 , 2SD1 |
Neu und Original | |
Mfr.#: IPB039N10N3GE8197ATMA1 |
Neu und Original |