We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFD8P05 DISTI # RFD8P05-ND | ON Semiconductor | MOSFET P-CH 50V 8A I-PAK Min Qty: 1800 Container: Tube | Limited Supply - Call | |
| RFD8P05SM DISTI # RFD8P05SM-ND | ON Semiconductor | MOSFET P-CH 50V 8A TO-252AA Min Qty: 1800 Container: Tube | Limited Supply - Call | |
| RFD8P05SM DISTI # RFD8P05SM | ON Semiconductor | - Bulk (Alt: RFD8P05SM) Min Qty: 1667 Container: Bulk | Americas - 0 |
|
| RFD8P05SM9A DISTI # RFD8P05SM9A | Renesas Electronics Corporation | Trans MOSFET P-CH 50V 8A 3-Pin TO-252AA T/R - Bulk (Alt: RFD8P05SM9A) RoHS: Not Compliant Min Qty: 391 Container: Bulk | Americas - 0 |
|
| RFD8P05SM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 3600 |
|
| RFD8P05SM9A | Harris Semiconductor | 8A, 50V, 0.300 Ohm, P-Channel Power MOSFET RoHS: Not Compliant | 3179 |
|
| RFD8P05SM9AS2463 | Harris Semiconductor | 8A, 50V, 0.300 Ohm, P-Channel Power MOSFET RoHS: Not Compliant | 2500 |
|
| RFD8P05 | Intersil Corporation | 327 |
| |
| RFD8P05 | Intersil Corporation | MOSFET Transistor, P-Channel, TO-251AA | 261 |
|
| RFD8P05SM | Harris Semiconductor | 8 A, 50 V, 0.3 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-252AA | 431 |
|
| RFD8P05SM | N/A | 8 A, 50 V, 0.3 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-252AA | 932 |
|
| RFD8P05SM9A | HARTING Technology Group | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | Europe - 54200 | |
| RFD8P05SM | HARTING Technology Group | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | Europe - 3017 | |
| RFD8P05SM96 | HARTING Technology Group | RoHS: Not Compliant | Europe - 750 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RFD8P05 OMO.#: OMO-RFD8P05 |
MOSFET TO-251AA P-Ch Power |
|
Mfr.#: RFD8P03 OMO.#: OMO-RFD8P03-1190 |
Neu und Original |
|
|
Mfr.#: RFD8P03L OMO.#: OMO-RFD8P03L-1190 |
Neu und Original |
|
Mfr.#: RFD8P05 OMO.#: OMO-RFD8P05-ON-SEMICONDUCTOR |
MOSFET P-CH 50V 8A I-PAK |
|
Mfr.#: RFD8P05SM |
MOSFET P-CH 50V 8A TO-252AA |
|
|
Mfr.#: RFD8P05SM (TO-251) OMO.#: OMO-RFD8P05SM-TO-251--1190 |
Neu und Original |
|
|
Mfr.#: RFD8P06 OMO.#: OMO-RFD8P06-1190 |
Neu und Original |
|
|
Mfr.#: RFD8P06E OMO.#: OMO-RFD8P06E-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: RFD8P06LE OMO.#: OMO-RFD8P06LE-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: RFD8P06SM OMO.#: OMO-RFD8P06SM-1190 |
Neu und Original |