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SCT2160KEC

SCT2160KEC
Mfr. #:
SCT2160KEC
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET 1200V20A160mOhm Silicon Carbide SiC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SCT2160KEC Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SCT2160KEC Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1200 V
Id - Kontinuierlicher Drainstrom:
22 A
Rds On - Drain-Source-Widerstand:
160 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.6 V
Vgs - Gate-Source-Spannung:
- 6 V, 22 V
Qg - Gate-Ladung:
62 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
165 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
SCT2x
Transistortyp:
1 N-Channel Power MOSFET
Marke:
ROHM Halbleiter
Vorwärtstranskonduktanz - Min:
2.4 S
Abfallzeit:
27 ns
Produktart:
MOSFET
Anstiegszeit:
25 ns
Werkspackungsmenge:
360
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
67 ns
Typische Einschaltverzögerungszeit:
23 ns
Teil # Aliase:
SCT2160KE
Gewichtseinheit:
1.340411 oz
Tags
SCT2160, SCT216, SCT21, SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
1200 V 160 mOhm 20 A Surface Flange Mount 2G SiC MosFet - TO-247-3
***Components
SiC N-Channel MOSFET, 22 A, 1200 V, 3-Pin TO-247 ROHM SCT2160KEC
***ical
Trans MOSFET N-CH SiC 1.2KV 22A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans SiC MOSFET N-CH 1200V 22A 3-Pin TO-247 Tube
***i-Key
MOSFET N-CH 1200V 22A TO-247
***ronik
SiC-N 1200V 22A 160mOhm TO247-3
***
FET: 1200V, 20A, 160MOHM, TO24
***ark
Mosfet, N Channel, 1.2Kv, 22A, 0R16, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.16Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:4V; Power Dissipation Pd:165W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C
***nell
MOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:22A; Napięcie drenu / źródła Vds:1.2kV; Rezystancja przewodzenia Rds(on):0.16ohm; Napięcie Vgs pomiaru Rds(on):18V; Napięcie progowe Vgs:4V; Straty mocy Pd:165W; Rodzaj obudowy tranzystora:TO-247; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (15-Jan-2018); Temperatura robocza, min.:-55°C
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Electronic Vehicle (EV) Solutions
ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.
Teil # Mfg. Beschreibung Aktie Preis
SCT2160KEC
DISTI # 30612591		ROHM SemiconductorSCT2160KEC
RoHS: Compliant		2
  • 2:$15.0450
SCT2160KEC
DISTI # SCT2160KEC-ND		ROHM SemiconductorMOSFET N-CH 1200V 22A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 250:$11.2871
  • 100:$12.3794
  • 25:$13.4716
  • 10:$14.5640
  • 1:$16.0200
SCT2160KEC
DISTI # C1S625901535563		ROHM SemiconductorMOSFETs
RoHS: Compliant		30
  • 26:$27.6000
  • 6:$29.7000
  • 2:$31.3000
SCT2160KEC
DISTI # C1S625901135062		ROHM SemiconductorMOSFETs
RoHS: Compliant		2
  • 1:$11.8000
SCT2160KEC
DISTI # SCT2160KEC		ROHM SemiconductorTrans SiC MOSFET N-CH 1200V 22A 3-Pin TO-247 Tube - Rail/Tube (Alt: SCT2160KEC)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$10.3900
  • 10:$10.1900
  • 25:$9.9900
  • 50:$9.7900
  • 100:$9.1900
  • 500:$8.6900
  • 1000:$8.3900
SCT2160KEC
DISTI # 06X0711		ROHM SemiconductorMOSFET, N CHANNEL, 1.2KV, 22A, 0R16, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:4V RoHS Compliant: Yes1026
  • 1:$13.9000
  • 10:$12.7800
  • 25:$12.2500
  • 50:$11.6500
  • 100:$11.0400
SCT2160KEC
DISTI # 755-SCT2160KEC		ROHM SemiconductorMOSFET 1200V20A160mOhm Silicon Carbide SiC
RoHS: Compliant		0
  • 1:$13.9000
  • 10:$12.7800
  • 25:$12.2500
  • 100:$11.0400
SCT2160KEC
DISTI # 1246853		ROHM SemiconductorSIC MOSFET N-CHANNEL 1200V 22A TO247, EA1
  • 1:£12.1900
  • 5:£10.9700
  • 10:£9.9800
  • 25:£9.1500
  • 50:£8.6900
SCT2160KEC
DISTI # 2345466		ROHM SemiconductorMOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3
RoHS: Compliant		746
  • 1:£11.5400
  • 5:£11.0500
  • 10:£9.7200
  • 50:£9.4700
  • 100:£9.2100
SCT2160KECROHM SemiconductorMOSFET 1200V20A160mOhm Silicon Carbide SiC
RoHS: Compliant		Americas -
    SCT2160KEC
    DISTI # 2345466    		ROHM SemiconductorMOSFET, N CH, 1.2KV, 22A, 0R16, TO-247-3
    RoHS: Compliant    		720
    • 1:$22.0000
    • 10:$20.2300
    • 25:$19.3900
    • 100:$19.1100
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    LSIC1MO120E0080

    Mfr.#: LSIC1MO120E0080

    OMO.#: OMO-LSIC1MO120E0080

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    OMO.#: OMO-ATMEGA4808-AFR-MICROCHIP-TECHNOLOGY

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    		 1200V/160mohm SiC MOSFET TO-247-3L
    Verfügbarkeit
    Aktie:
    318
    Auf Bestellung:
    2301
    Menge eingeben:
    Der aktuelle Preis von SCT2160KEC dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    13,89 $
    13,89 $
    10
    12,77 $
    127,70 $
    25
    12,24 $
    306,00 $
    100
    11,10 $
    1 110,00 $
    250
    11,03 $
    2 757,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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