| PartNumber | DMN61D8LVT-7 | DMN61D8LVT-13 | DMN61D8LVTQ-13 |
| Description | MOSFET 60V N-Ch Enh FET 20Vgss TSOT26 | MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA | MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOT-26-6 | TSOT-26-6 | TSOT-26-6 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 630 mA | 630 mA | 630 mA |
| Rds On Drain Source Resistance | 1.1 Ohms | 1.1 Ohms | 1.1 Ohms |
| Vgs th Gate Source Threshold Voltage | 1.3 V | 1.3 V | 1.3 V |
| Vgs Gate Source Voltage | 12 V | 12 V | 12 V |
| Qg Gate Charge | 740 pC | 740 pC | 740 pC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.09 W | 1.09 W | 1.09 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | DMN61 | DMN61 | DMN61 |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 80 mS | 80 mS | 80 mS |
| Fall Time | 440 ns | 440 ns | 440 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 301 ns | 301 ns | 301 ns |
| Factory Pack Quantity | 3000 | 10000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 582 ns | 582 ns | 582 ns |
| Typical Turn On Delay Time | 131 ns | 131 ns | 131 ns |
| Unit Weight | - | 0.000459 oz | - |
| Qualification | - | - | AEC-Q101 |
| Height | - | - | 1 mm |
| Length | - | - | 2.9 mm |
| Width | - | - | 1.6 mm |