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DMN61D8LVTQ-7

DMN61D8LVTQ-7
Mfr. #:
DMN61D8LVTQ-7
Hersteller:
Diodes Incorporated
Beschreibung:
IGBT Transistors MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN61D8LVTQ-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMN61D8LVTQ-7 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Eingebaute Dioden
Produktkategorie
FETs - Arrays
Serie
DMN61
Verpackung
Digi-ReelR Alternative Verpackung
Montageart
SMD/SMT
Paket-Koffer
SOT-23-6 Thin, TSOT-23-6
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
TSOT-26
Aufbau
Single
FET-Typ
2 N-Channel (Dual)
Leistung max
820mW
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
60V
Eingangskapazität-Ciss-Vds
12.9pF @ 12V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
630mA
Rds-On-Max-Id-Vgs
1.8 Ohm @ 150mA, 5V
Vgs-th-Max-Id
2V @ 1mA
Gate-Lade-Qg-Vgs
0.74nC @ 5V
Pd-Verlustleistung
1.09 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
440 ns
Anstiegszeit
301 ns
Vgs-Gate-Source-Spannung
+/- 12 V
ID-Dauer-Drain-Strom
630 mA
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Source-Threshold-Voltage
1.3 V
Rds-On-Drain-Source-Widerstand
2.4 Ohms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
582 ns
Typische-Einschaltverzögerungszeit
131 ns
Qg-Gate-Ladung
0.74 nC
Vorwärts-Transkonduktanz-Min
80 mS
Kanal-Modus
Erweiterung
Tags
DMN61D8LV, DMN61D8, DMN61D, DMN61, DMN6, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 0.63A Automotive 6-Pin TSOT-26 T/R
***et Europe
Trans MOSFET N-CH 60V 0.63A 6-Pin TSOT-26 T/R
***i-Key
MOSFET 2N-CH 60V 0.63A TSOT26
***ure Electronics
60V 0.63A 1.8O TSOT26
Adaptive LED Lighting Applications
Diodes Inc. Adaptive LED Lighting Applications are in high demand for lighting in vehicles, including ambient mood lighting, illuminated sill plates and puddle lighting as relatively recent additions. Elegant lighting design, where effects like dimming and fade-in/fade-out are required, need a dimmable device. The LED Drivers with switching regulators allow the maximum overall efficiency with the highest degree of control and accuracy. Simple LED lighting solutions can be implemented with a series resistor, however this has numerous disadvantages in an automotive environment. The LED output will vary with voltage during stop/start events, and VF matched LEDs may be required for visual matching. LED lifetimes may be reduced due to uncontrolled current spikes. Diodes LED Drivers conquer these issues simply and cost-effectively, with a small footprint.
Automotive Applications
Diodes Inc. Automotive Parts have a wide portfolio of automotive-compliant analog, discrete and timing products. The Automotive Parts offer a broad range of solutions for various automotive applications, including BLDC, Adaptive LED Lighting, and Connected Driving.
Automotive MOSFETs
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.
Connected Driving Applications
Diodes Inc. Connected Driving Applications address issues such as finding a parking space, adaptive navigation through busy streets, or using technology to avoid congestion on major roads between cities, along with increasing driver and pedestrian safety. The ultimate objective is the fully autonomous car, which can only be enabled through high-speed data communications. Vehicle-to-Everything (V2X) communications include Vehicle-to-Car, -Pedestrian, -Device and -Grid – fuelled by increased ADAS functionality. The volume of data being generated, transferred and processed within the car is increasing exponentially. Reliable high-speed data communications will be a part of every new vehicle’s infrastructure. Diodes Inc. offers the products to realize the vision of the fully autonomous, connected vehicle.
Automotive Brushless DC (BLDC) Motor Applications
Diodes Inc. Automotive Brushless DC (BLDC) Motors offer improved performance, longer lifetime, reduced noise and greater ease of use when compared to equivalent mechanical solutions. Within the BLDC Motor Systems, MOSFETs are typically configured in a three-phase bridge arrangement to drive the DC motor. The MOSFETs must be capable of handling start-up and stalled motor currents of up to six times the continuous current rating of the motor. The BLDC Motors are extensively used in automotive applications such as fuel pumps, water pumps, Anti-Lock Braking Systems (ABS), and provide additional torque for power steering systems.
Diodes Inc. DMNxx MOSFETs
Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.
Teil # Mfg. Beschreibung Aktie Preis
DMN61D8LVTQ-7
DISTI # V72:2272_06697496		Zetex / Diodes IncTrans MOSFET N-CH 60V 0.63A Automotive 6-Pin TSOT-26 T/R3000
  • 3000:$0.1439
  • 1000:$0.1687
  • 500:$0.2186
  • 250:$0.2210
  • 100:$0.2233
  • 25:$0.3595
  • 10:$0.3633
  • 1:$0.4394
DMN61D8LVTQ-7
DISTI # DMN61D8LVTQ-7DITR-ND		Diodes IncorporatedMOSFET 2N-CH 60V 0.63A TSOT26
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1824
DMN61D8LVTQ-7
DISTI # DMN61D8LVTQ-7DICT-ND		Diodes IncorporatedMOSFET 2N-CH 60V 0.63A TSOT26
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2061
  • 500:$0.2667
  • 100:$0.3637
  • 10:$0.4850
  • 1:$0.5800
DMN61D8LVTQ-7
DISTI # DMN61D8LVTQ-7DIDKR-ND		Diodes IncorporatedMOSFET 2N-CH 60V 0.63A TSOT26
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2061
  • 500:$0.2667
  • 100:$0.3637
  • 10:$0.4850
  • 1:$0.5800
DMN61D8LVTQ-7
DISTI # 31353466		Zetex / Diodes IncTrans MOSFET N-CH 60V 0.63A Automotive 6-Pin TSOT-26 T/R3000
  • 47:$0.4394
DMN61D8LVTQ-7
DISTI # DMN61D8LVTQ-7		Diodes IncorporatedTrans MOSFET N-CH 60V 0.63A 6-Pin TSOT-26 T/R - Tape and Reel (Alt: DMN61D8LVTQ-7)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1339
  • 6000:$0.1269
  • 12000:$0.1209
  • 18000:$0.1159
  • 30000:$0.1129
DMN61D8LVTQ-7
DISTI # DMN61D8LVTQ-7		Diodes IncorporatedTrans MOSFET N-CH 60V 0.63A 6-Pin TSOT-26 T/R (Alt: DMN61D8LVTQ-7)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    DMN61D8LVTQ-7
    DISTI # 621-DMN61D8LVTQ-7    		Diodes IncorporatedMOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson
    RoHS: Compliant    		0
    • 1:$0.4700
    • 10:$0.3870
    • 100:$0.2360
    • 1000:$0.1820
    • 3000:$0.1560
    DMN61D8LVTQ-13
    DISTI # 621-DMN61D8LVTQ-13    		Diodes IncorporatedMOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson
    RoHS: Compliant    		0
    • 10000:$0.1560
    Bild Teil # Beschreibung
    DMN61D9UWQ-13

    Mfr.#: DMN61D9UWQ-13

    OMO.#: OMO-DMN61D9UWQ-13

    		 MOSFET MOSFET BVDSS: 41V-60V
    DMN61D9UWQ-7

    Mfr.#: DMN61D9UWQ-7

    OMO.#: OMO-DMN61D9UWQ-7

    		 MOSFET MOSFET BVDSS: 41V-60V
    DMN61D8L-7

    Mfr.#: DMN61D8L-7

    OMO.#: OMO-DMN61D8L-7

    		 MOSFET 60V N-Ch Enh FET 20Vgss SOT23
    DMN61D9UW-7

    Mfr.#: DMN61D9UW-7

    OMO.#: OMO-DMN61D9UW-7

    		 MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
    DMN61D8LVT-13

    Mfr.#: DMN61D8LVT-13

    OMO.#: OMO-DMN61D8LVT-13

    		 MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA
    DMN61D9U-13

    Mfr.#: DMN61D9U-13

    OMO.#: OMO-DMN61D9U-13

    		 MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
    DMN61D8LQ-7

    Mfr.#: DMN61D8LQ-7

    OMO.#: OMO-DMN61D8LQ-7-DIODES

    		 Trans MOSFET N-CH 60V 0.47A Automotive 3-Pin SOT-23 T/R
    DMN61D9UW-7

    Mfr.#: DMN61D9UW-7

    OMO.#: OMO-DMN61D9UW-7-DIODES

    		 N-CHANNEL ENHANCEMENT MODE MOSFET
    DMN61D8L-7

    Mfr.#: DMN61D8L-7

    OMO.#: OMO-DMN61D8L-7-DIODES

    		 Darlington Transistors MOSFET 60V N-Ch Enh FET 20Vgss SOT23
    DMN61D8LVT-7

    Mfr.#: DMN61D8LVT-7

    OMO.#: OMO-DMN61D8LVT-7-DIODES

    		 IGBT Transistors MOSFET 60V N-Ch Enh FET 20Vgss TSOT26
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von DMN61D8LVTQ-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,17 $
    0,17 $
    10
    0,16 $
    1,61 $
    100
    0,15 $
    15,24 $
    500
    0,14 $
    71,95 $
    1000
    0,14 $
    135,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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