IPD

IPD50N06S4L08ATMA2 vs IPD50N06S4L08ATMA1 vs IPD50N06S4L12ATMA1

 
PartNumberIPD50N06S4L08ATMA2IPD50N06S4L08ATMA1IPD50N06S4L12ATMA1
DescriptionMOSFET MOSFETMOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
ConfigurationSingleSingleSingle
QualificationAEC-Q101--
PackagingReelReelReel
Height2.3 mm2.3 mm2.3 mm
Length6.5 mm6.5 mm6.5 mm
SeriesIPD50N06XPD50N06XPD50N06
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesIPD50N06S4L-08 IPD5N6S4L8XT SP001028664IPD50N06S4L-08 IPD50N06S4L08XT SP000374322IPD50N06S4L-12 IPD50N06S4L12XT SP000476422
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Vds Drain Source Breakdown Voltage-60 V60 V
Id Continuous Drain Current-50 A50 A
Rds On Drain Source Resistance-6.3 mOhms9.6 mOhms
Vgs th Gate Source Threshold Voltage-1.2 V1.2 V
Vgs Gate Source Voltage-16 V16 V
Qg Gate Charge-64 nC40 nC
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 175 C+ 175 C
Pd Power Dissipation-71 W50 W
Channel Mode-EnhancementEnhancement
Fall Time-8 ns5 ns
Rise Time-2 ns2 ns
Typical Turn Off Delay Time-45 ns25 ns
Typical Turn On Delay Time-9 ns6 ns
  • Beginnen mit
  • IPD 1152
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPD50P04P4-13 MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
IPD50P04P4L-11 MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
IPD50N10S3L-16 MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T
IPD50N06S4L08ATMA2 MOSFET MOSFET
IPD50P03P4L-11 MOSFET P-Ch -30V -50A DPAK-2 OptiMOS-P2
IPD50N06S4L12ATMA2 MOSFET MOSFET
IPD50P04P413ATMA1 MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
IPD50P04P4L11ATMA1 MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
IPD50N08S4-13 MOSFET N-CHANNEL 75/80V
IPD50N08S413ATMA1 MOSFET N-CHANNEL 75/80V
IPD50N12S3L15ATMA1 MOSFET N-CHANNEL 100+
IPD50N06S4L12ATMA2 MOSFET N-CH 60V 50A TO252-3
IPD50N06S4L08ATMA2 MOSFET N-CH 60V 50A TO252-3
IPD50N08S4-13 MOSFET N-CHANNEL 75/80V
IPD50N06S4L08ATMA1 MOSFET N-CH 60V 50A TO252-3
IPD50N06S4L12ATMA1 MOSFET N-CH 60V 50A TO252-3-11
IPD50N10S3L-16 MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T
IPD50N10S3L16ATMA1 MOSFET N-CH 100V 50A TO252-3
IPD50N12S3L15ATMA1 MOSFET N-CHANNEL_100+
IPD50P03P4L-11 Trans MOSFET P-CH 30V 50A 3-Pin TO-252 T/R (Alt: IPD50P03P4L-11)
IPD50P03P4L11ATMA1 MOSFET P-CH 30V 50A TO252-3
IPD50P04P4-13 Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) TO-252
IPD50P04P413ATMA1 MOSFET P-CH 40V 50A TO252-3
IPD50P04P4L-11 Trans MOSFET P-CH 40V 50A 3-Pin TO-252 T/R (Alt: IPD50P04P4L-11)
IPD50P04P4L11ATMA1 MOSFET P-CH 40V 50A TO252-3
IPD50R1K4CEAUMA1 MOSFET N-CH 500V 3.1A PG-TO-252
IPD50R1K4CEBTMA1 MOSFET N-CH 500V 3.1A PG-TO-252
IPD50R280CEATMA1 MOSFET N-CH 500V 13A PG-TO252
IPD50N08S413ATMA1 MOSFET N-CHANNEL 75/80V
Infineon Technologies
Infineon Technologies
IPD50R1K4CEAUMA1 MOSFET CONSUMER
IPD50R1K4CEBTMA1 MOSFET N-Ch 500V 8.8A DPAK-2
IPD50N06S4L08ATMA1 MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2
IPD50N06S4L12ATMA1 MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2
IPD50P04P413ATMA1-CUT TAPE Neu und Original
IPD50P04P4L11ATMA1-CUT TAPE Neu und Original
IPD50P04P4L-11 . Neu und Original
IPD50N06S4L-12(SP0010286 Neu und Original
IPD50N10S3L Neu und Original
IPD50N10S3L-16 QN10L16 Neu und Original
IPD50P03P4L Neu und Original
IPD50P04P4L-11 4P04L11 Neu und Original
IPD50P04P4L11ATMA1INFINE Neu und Original
IPD50P04P4L11XT Neu und Original
IPD50P04PCL-11 Neu und Original
IPD50R1K4CE MOSFET N-Ch 500V 8.8A DPAK-2
IPD50R1K4CEBTMA1 , 2SD22 Neu und Original
IPD50R280CE , 2SD2210-T Neu und Original
IPD50R280CE(SP001117680 Neu und Original
IPD50R280CE(SP001117680) Neu und Original
IPD50R280CE Trans MOSFET N-CH 550V 13A 3-Pin TO-252 T/R (Alt: IPD50R280CE)
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