IPD

IPD50R800CEATMA1 vs IPD50R650CEBTMA1 vs IPD50R800CEAUMA1

 
PartNumberIPD50R800CEATMA1IPD50R650CEBTMA1IPD50R800CEAUMA1
DescriptionMOSFET CONSUMERMOSFET N-Ch 500V 6.1A DPAK-2Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) DPAK T/R
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Vds Drain Source Breakdown Voltage500 V500 V-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Part # AliasesIPD50R800CEATMA1 SP001117710IPD50R650CE SP000992078-
Unit Weight0.139332 oz0.139332 oz-
Number of Channels-1 Channel-
Transistor Polarity-N-Channel-
Id Continuous Drain Current-9 A-
Rds On Drain Source Resistance-590 mOhms-
Vgs th Gate Source Threshold Voltage-2.5 V-
Vgs Gate Source Voltage-20 V-
Qg Gate Charge-15 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-69 W-
Configuration-Single-
Channel Mode-Enhancement-
Tradename-CoolMOS-
Series-IPD50R650-
Transistor Type-1 N-Channel-
Fall Time-13 ns-
Rise Time-5 ns-
Typical Turn Off Delay Time-27 ns-
Typical Turn On Delay Time-6 ns-
  • Beginnen mit
  • IPD 1152
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IPD60R145CFD7ATMA1 MOSFET HIGH POWER_NEW
IPD530N15N3GATMA1 MOSFET MV POWER MOS
IPD60N10S4L-12 MOSFET N-Ch 100V 60A DPAK-2
IPD5N25S3-430 MOSFET N-Ch 250V 5A DPAK-2
IPD60N10S4L12ATMA1 MOSFET N-Ch 100V 60A DPAK-2
IPD60N10S412ATMA1 MOSFET N-CHANNEL 100+
IPD530N15N3GATMA1 MOSFET N-CH 150V 21A
IPD5N25S3430ATMA1 MOSFET N-CH TO252-3
IPD60R145CFD7ATMA1 HIGH POWER_NEW
IPD5N03LAG MOSFET N-CH 25V 50A TO252-3-11
IPD530N15N3GBTMA1 MOSFET N-CH 150V 21A TO252-3
IPD50R650CEBTMA1 MOSFET N CH 500V 6.1A PG-TO252
IPD50R800CEATMA1 MOSFET N CH 500V 5A TO252
IPD50R800CEAUMA1 Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) DPAK T/R
IPD50R950CEATMA1 MOSFET N-CH 500V 4.3A PG-T0252
IPD50R950CEAUMA1 Trans MOSFET N-CH 500V 4.3A T/R
IPD50R950CEBTMA1 MOSFET N-CH 500V 4.3A PG-TO252
IPD5N25S3-430 MOSFET N-Ch 250V 5A DPAK-2
IPD600N25N3GATMA1 MOSFET N-CH 250V 25A
IPD600N25N3GBTMA1 MOSFET N-CH 250V 25A TO252-3
IPD60N10S4L-12 Trans MOSFET N-CH 100V 60A
IPD60N10S412ATMA1 MOSFET N-CHANNEL 100+
IPD50R800CEBTMA1 IGBT Transistors MOSFET N-Ch 550V 5A DPAK-2
IPD60N10S4L12ATMA1 MOSFET N-CH TO252-3
Infineon Technologies
Infineon Technologies
IPD50R800CEBTMA1 MOSFET N-Ch 500V 5A DPAK-2
IPD600N25N3GATMA1 MOSFET MV POWER MOS
IPD50R950CEBTMA1 MOSFET N-Ch 500V 4.3A DPAK-2 CoolMOS CE
IPD50R950CEAUMA1 MOSFET CONSUMER
IPD50R800CEATMA1 MOSFET CONSUMER
IPD530N15N3GATMA1-CUT TAPE Neu und Original
IPD60N10S4L12ATMA1-CUT TAPE Neu und Original
IPD50R650CEBTMA1 , 2SD22 Neu und Original
IPD50R800CEATMA1 , 2SD22 Neu und Original
IPD50R800CEBTMA1 , 2SD22 Neu und Original
IPD50R950CE STK830D Neu und Original
IPD50R950CEATMA1 , 2SD22 Neu und Original
IPD50R950CEBTMA1 , 2SD22 Neu und Original
IPD530N15N3 G Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-252
IPD600N25N3 Neu und Original
IPD600N25N3 G Trans MOSFET N-CH 250V 25A 3-Pin TO-252 T/R (Alt: IPD600N25N3 G)
IPD600N25N3G POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 250V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA
IPD600N25N3G , 2SD2240A- Neu und Original
IPD600N25N3GS Neu und Original
IPD600N25N3GXT Neu und Original
IPD60N650CE Neu und Original
IPD50R800CE MOSFET N-Ch 500V 5A DPAK-2
IPD50R950CE MOSFET N-Ch 500V 4.3A DPAK-2 CoolMOS CE
IPD530N15N3G Neu und Original
IPD60N03 Neu und Original
IPD60N03LG Neu und Original
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