 | |  | |
| PartNumber | IPD60R650CEBTMA1 | IPD60R650CEAUMA1 | IPD60R750E6ATMA1 |
| Description | MOSFET CONSUMER | MOSFET CONSUMER | RF Bipolar Transistors MOSFET N-Ch 650V 5.7A DPAK-2 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | CoolMOS CE | CoolMOS CE | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPD60R650CE SP001369530 | IPD60R650CE SP001396884 | - |
| Unit Weight | 0.011993 oz | 0.011993 oz | - |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Id Continuous Drain Current | - | 9.9 A | - |
| Rds On Drain Source Resistance | - | 540 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 20.5 nC | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 82 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 11 ns | - |
| Moisture Sensitive | - | Yes | - |
| Rise Time | - | 8 ns | - |
| Typical Turn Off Delay Time | - | 58 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |
| Part Aliases | - | - | IPD60R750E6 SP001117728 |
| Package Case | - | - | TO-252-3 |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD60R950C6ATMA1 | MOSFET N-Ch 650V 4.4A DPAK-2 | |
| IPD60R650CEAUMA1 | Trans MOSFET N-CH 600V 9.9A 3-Pin(2+Tab) DPAK T/R | ||
| IPD60R800CEATMA1 | MOSFET N-CH 600V TO-252-3 | ||
| IPD60R800CEAUMA1 | Trans MOSFET N-CH 600V 8.4A 3-Pin(2+Tab) DPAK T/R | ||
| IPD60R650CEBTMA1 | MOSFET N-CH 600V 7A TO252 | ||
| IPD60R750E6BTMA1 | MOSFET N-CH 600V 5.7A TO252 | ||
| IPD60R950C6 | MOSFET N-CH 600V 4.4A TO252 | ||
| IPD60R950C6ATMA1 | MOSFET N-Ch 650V 4.4A DPAK-2 | ||
| IPD60R750E6ATMA1 | RF Bipolar Transistors MOSFET N-Ch 650V 5.7A DPAK-2 | ||
Infineon Technologies |
IPD60R650CEBTMA1 | MOSFET CONSUMER | |
| IPD60R950C6 | MOSFET N-Ch 650V 4.4A DPAK-2 CoolMOS C6 | ||
| IPD60R800CEAUMA1 | MOSFET CONSUMER | ||
| IPD60R650CEAUMA1 | MOSFET CONSUMER | ||
| IPD60R950C6ATMA1-CUT TAPE | Neu und Original | ||
| IPD60R950C6BTMA1 | Trans MOSFET N-CH 600V 4.4A 3-Pin(2+Tab) DPAK T/R | ||
| IPD60R950C6 6R950C6 | Neu und Original | ||
| IPD60R650CEATMA1 , 2SD23 | Neu und Original | ||
| IPD60R750E6 6R750E6 | Neu und Original | ||
| IPD60R800CE | 600V,800m��,8.4A,N-Channel Power MOSFET | ||
| IPD60R950C6 6R950C6 INF | Neu und Original | ||
| IPD60R950C | Neu und Original | ||
| IPD60R750E6 | IGBT Transistors MOSFET N-Ch 650V 5.7A DPAK-2 CoolMOS E6 |