IPD60R3K stock, IPD60R3K, IPD60R3K3C6ATMA1


PartNumber	IPD60R3K3C6ATMA1	IPD60R3K3C6	IPD60R3K4CEAUMA1
Description	MOSFET N-Ch 650V 1.7A DPAK-2	MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6	MOSFET N-CH 650V 2.6A TO252-3
Manufacturer	Infineon	Infineon	-
Product Category	MOSFET	MOSFET	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	TO-252-3	TO-252-3	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	600 V	600 V	-
Id Continuous Drain Current	1.7 A	1.7 A	-
Rds On Drain Source Resistance	3.3 Ohms	2.97 Ohms	-
Vgs th Gate Source Threshold Voltage	3 V	2.5 V	-
Vgs Gate Source Voltage	30 V	20 V	-
Qg Gate Charge	4.6 nC	4.6 nC	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	18.1 W	18.1 W	-
Configuration	Single	Single	-
Tradename	CoolMOS	CoolMOS	-
Packaging	Reel	Reel	-
Height	2.3 mm	2.3 mm	-
Length	6.5 mm	6.5 mm	-
Series	CoolMOS C6	CoolMOS C6	-
Transistor Type	1 N-Channel	1 N-Channel	-
Width	6.22 mm	6.22 mm	-
Brand	Infineon Technologies	Infineon Technologies	-
Fall Time	60 ns	60 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	10 ns	10 ns	-
Factory Pack Quantity	2500	2500	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	40 ns	40 ns	-
Typical Turn On Delay Time	8 ns	8 ns	-
Part # Aliases	IPD60R3K3C6 SP001117718	IPD60R3K3C6BTMA1 SP000799130	-
Unit Weight	0.139332 oz	0.139332 oz	-
RoHS	-	Y	-
Channel Mode	-	Enhancement	-

Search Part Number : "IPD60R3K", Match & Start with "IPD60R3K" - Total : 7

Hersteller	Teil #	Beschreibung
Infineon Technologies	IPD60R3K3C6ATMA1	MOSFET N-Ch 650V 1.7A DPAK-2
	IPD60R3K4CEAUMA1	MOSFET N-CH 650V 2.6A TO252-3
	IPD60R3K3C6	MOSFET N-CH 600V 1.7A TO252-3
	IPD60R3K3C6ATMA1	MOSFET N-Ch 650V 1.7A DPAK-2
Infineon Technologies	IPD60R3K3C6	MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6
	IPD60R3K3C6 , 2SD2345-R	Neu und Original
	IPD60R3K3C6BTMA1	MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6

IPD60R3K